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Graphene has been attracting great interest because of its distinctive band structure and physical properties. Today, graphene is limited to small sizes because it is produced mostly by exfoliating graphite. We grew large-area graphene films of the order of centimeters on copper substrates by chemical vapor deposition using methane. The films are predominantly single-layer graphene, with a small percentage (less than 5%) of the area having few layers, and are continuous across copper surface steps and grain boundaries. The low solubility of carbon in copper appears to help make this growth process self-limiting. We also developed graphene film transfer processes to arbitrary substrates, and dual-gated field-effect transistors fabricated on silicon/silicon dioxide substrates showed electron mobilities as high as 4050 square centimeters per volt per second at room temperature.
Thrust-producing harmonically oscillating foils are studied through force and power measurements, as well as visualization data, to classify the principal characteristics of the flow around and in the wake of the foil. Visualization data are obtained using digital particle image velocimetry at Reynolds number 1100, and force and power data are measured at Reynolds number 40 000. The experimental results are compared with theoretical predictions of linear and nonlinear inviscid theory and it is found that agreement between theory and experiment is good over a certain parametric range, when the wake consists of an array of alternating vortices and either very weak or no leading-edge vortices form. High propulsive efficiency, as high as 87%, is measured experimentally under conditions of optimal wake formation. Visualization results elucidate the basic mechanisms involved and show that conditions of high efficiency are associated with the formation on alternating sides of the foil of a moderately strong leading-edge vortex per half-cycle, which is convected downstream and interacts with trailing-edge vorticity, resulting eventually in the formation of a reverse Kármán street. The phase angle between transverse oscillation and angular motion is the critical parameter affecting the interaction of leading-edge and trailing-edge vorticity, as well as the efficiency of propulsion.
Hexagonal boron nitride (h-BN) is very attractive for many applications, particularly, as protective coating, dielectric layer/substrate, transparent membrane, or deep ultraviolet emitter. In this work, we carried out a detailed investigation of h-BN synthesis on Cu substrate using chemical vapor deposition (CVD) with two heating zones under low pressure (LP). Previous atmospheric pressure (AP) CVD syntheses were only able to obtain few layer h-BN without a good control on the number of layers. In contrast, under LPCVD growth, monolayer h-BN was synthesized and time-dependent growth was investigated. It was also observed that the morphology of the Cu surface affects the location and density of the h-BN nucleation. Ammonia borane is used as a BN precursor, which is easily accessible and more stable under ambient conditions than borazine. The h-BN films are characterized by atomic force microscopy, transmission electron microscopy, and electron energy loss spectroscopy analyses. Our results suggest that the growth here occurs via surface-mediated growth, which is similar to graphene growth on Cu under low pressure. These atomically thin layers are particularly attractive for use as atomic membranes or dielectric layers/substrates for graphene devices.
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A 3D ternary hybrid containing Co<sub>0.85</sub>Se nanosheet-array and NiFe-LDH grown on electrochemically exfoliated graphene was synthesized for highly-efficient overall water-splitting.’
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The mechanics of film-on-foil devices is presented in the context of thin-film transistors on steel and plastic foils. Provided the substrates are thin, such transistors function well after the foils are rolled to small radii of curvature. When a substrate with a lower elastic modulus is used, smaller radii of curvature can be achieved. Furthermore, when the transistors are placed in the neutral surface by sandwiching between a substrate and an encapsulation layer, even smaller radii of curvature can be attained. Transistor failure clearly shows when externally forced and thermally induced strains add to, or subtract from, each other.
In this research, we constructed a controlled chamber pressure CVD (CP-CVD) system to manipulate graphene's domain sizes and shapes. Using this system, we synthesized large (~4.5 mm(2)) single-crystal hexagonal monolayer graphene domains on commercial polycrystalline Cu foils (99.8% purity), indicating its potential feasibility on a large scale at low cost. The as-synthesized graphene had a mobility of positive charge carriers of ~11,000 cm(2) V(-1) s(-1) on a SiO(2)/Si substrate at room temperature, suggesting its comparable quality to that of exfoliated graphene. The growth mechanism of Cu-based graphene was explored by studying the influence of varied growth parameters on graphene domain sizes. Cu pretreatments, electrochemical polishing, and high-pressure annealing are shown to be critical for suppressing graphene nucleation site density. A pressure of 108 Torr was the optimal chamber pressure for the synthesis of large single-crystal monolayer graphene. The synthesis of one graphene seed was achieved on centimeter-sized Cu foils by optimizing the flow rate ratio of H(2)/CH(4). This work should provide clear guidelines for the large-scale synthesis of wafer-scale single-crystal graphene, which is essential for the optimized graphene device fabrication.
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A simple and accurate method of determining foil thickness is described. The method makes use of measurements of the spacing of intensity oscillations in convergent beam diffraction patterns obtained with commercial scanning transmission electron microscopes. Extension of the technique to determination of extinction distances and anomalous absorption parameters required for the two-beam dynamical theory is outlined briefly. Une méthode simple et exacte pour déterminer l′épaisseur des échantillons minces est décrite. Cette méthode se sert des mesures d′espacement aux oscillations d′intensité qui se trouvent sur les figures de diffraction obtenues au moyen d′un microscope électronique industriel à balayage par transmission. L′extension de cette méthode pour déterminer les distances d′extinction et des paramètres d′absorption anomalaux nécessaires pour la théorie dynamique à deux rayons est briévement discutée.
A new regime is described for Radiation Pressure Acceleration of a thin foil by an intense laser beam of above 10^20 W/cm^2. Highly monoenergetic proton beams extending to GeV energies can be produced with very high efficiency using circularly polarized light. The proton beams have a very small divergence angle (less than 4 degrees). This new method allows the construction of ultra-compact proton and ion accelerators with ultra-short particle bursts.
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Foils oscillating transversely to an oncoming uniform flow produce, under certain conditions, thrust. It is shown through experimental data from flapping foils and data from fish observation that thrust develops through the formation of a reverse von Kármán street whose preferred Strouhal number is between 0.25 and 0.35, and that optimal foil efficiency is achieved within this Strouhal range.
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Magnetic domain structures in thin foils may be revealed in a number of ways in the transmission electron microscope. The most commonly used modes (Fresnel, Foucault, holographic, differential phase contrast and low angle diffraction) are described and intercompared. The Fresnel and Foucault modes are simple to implement but provide a mainly qualitative description of the spatial variation of induction throughout the foil. Quantitative information may be obtained from the other two imaging modes but they require more sophisticated equipment. Electron diffraction is particularly useful for studying periodic magnetic structures. Examples of the use of these, and further specialised techniques, are presented by reference to some applications of current interest within magnetism.
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Controllable synthesis of monolayer MoS2 is essential for fulfilling the application potentials of MoS2 in optoelectronics and valleytronics, etc. Herein, we report the scalable growth of high quality, domain size tunable (edge length from ∼ 200 nm to 50 μm), strictly monolayer MoS2 flakes or even complete films on commercially available Au foils, via low pressure chemical vapor deposition method. The as-grown MoS2 samples can be transferred onto arbitrary substrates like SiO2/Si and quartz with a perfect preservation of the crystal quality, thus probably facilitating its versatile applications. Of particular interest, the nanosized triangular MoS2 flakes on Au foils are proven to be excellent electrocatalysts for hydrogen evolution reaction, featured by a rather low Tafel slope (61 mV/decade) and a relative high exchange current density (38.1 μA/cm(2)). The excellent electron coupling between MoS2 and Au foils is considered to account for the extraordinary hydrogen evolution reaction activity. Our work reports the synthesis of monolayer MoS2 when introducing metal foils as substrates, and presents sound proof that monolayer MoS2 assembled on a well selected electrode can manifest a hydrogen evolution reaction property comparable with that of nanoparticles or few-layer MoS2 electrocatalysts.