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Dynamic nuclear polarization (DNP) has revolutionized the field of NMR spectroscopy, expanding its reach and capabilities to investigate diverse materials, biomolecules, and complex dynamic processes. Bringing high-efficiency DNP to the nanometer scale would open new avenues for studying nanoscale nuclear spin ensembles, such as single biomolecules, virus particles, and condensed matter systems. Combining pulsed DNP with nanoscale force-detected magnetic resonance measurements, we demonstrated a 100-fold enhancement in the Boltzmann polarization of proton spins in nanoscale sugar droplets at 6 K and 0.33 T. Crucially, this enhancement corresponds to a factor of 200 reduction in the averaging time compared to measurements that rely on the detection of statistical fluctuations in nanoscale nuclear spin ensembles. These results significantly advance the capabilities of force-detected magnetic resonance detection as a practical tool for nanoscale imaging.

The advancement of next-generation magnetic devices depends on fast manipulating magnetic microstructures on the nanoscale. A universal method is presented for rapidly and reliably generating, controlling, and driving nano-scale skyrmioniums, through high-throughput micromagnetic simulations. Ultrafast switches are realized between skyrmionium and skyrmion states and rapidly change their polarities in monolayer magnetic nanodiscs by perpendicular magnetic fields. The transition mechanism by alternating magnetic fields differs from that under steady magnetic fields. New skyrmionic textures, such as flower-like and windmill-like skyrmions, are discovered. Moreover, this nanoscale skyrmionium can move rapidly and stably in nanoribbons using weaker spin-polarized currents. Explicit discussions are held regarding the physical mechanisms involved in ultrafast manipulations of skyrmioniums. This work provides further physical insight into the manipulation and applications of topological skyrmionic structures for developing low-power consumption and nanostorage devices.

Boiling is the out-of-equilibrium transition which occurs when a liquid is heated above its vaporization temperature. At the nanoscale, boiling may be triggered by irradiated nanoparticles immersed in water or nanocomposite surfaces and often results in micro-explosions. It is generally believed that nanoscale boiling occurs homogeneously when the local fluid temperature exceeds its spinodal temperature, around 573 K for water. Here, we employ molecular dynamics simulations to show that nanoscale boiling is an heterogenous phenomenon occuring when water temperature exceeds a wetting dependent onset temperature. This temperature can be 100 K below spinodal temperature if the solid surface is weakly wetting water. In addition, we show that boiling is a slow process controlled by the solid-liquid interfacial thermal conductance, which turns out to decrease significantly prior to phase change yielding long nucleation times. We illustrate the generality of this conclusion by considering both a spherical metallic nanoparticle immersed in water and a solid surface with nanoscale wetting heterogeneities. These results pave the way to control boiling using nanoscale patterned surfaces.

Exploration of the structure formation and dynamics of animate and inanimate matter on the nanometer scale is a highly interdisciplinary field of rapidly emerging research. It is relevant for various molecular and nanoscale systems of different origins and compositions and concerns numerous phenomena originating from physics, chemistry, biology, and materials science. This topical issue presents a collection of research papers devoted to different aspects of the Dynamics of Systems on the Nanoscale. Some of the contributions discuss specific applications of the research results in several modern and emerging technologies, such as controlled nanofabrication with charged particle beams or the design and practical realization of novel gamma-ray crystal-based light sources. Most works presented in this topical issue were reported at the joint Sixth International Conference "Dynamics of Systems on the Nanoscale" and the tenth International Symposium "Atomic Cluster Collisions" (DySoN-ISACC 2021), which were held in Santa Margherita Ligure, Italy, in October 2021.

Scatterometry is a tested method for measuring periodic semiconductor structures. Since the sizes of modern semiconductor structures have reached the nanoscale regime, the challenge is to determine the shape of periodic nanostructures with sub-nanometer accuracy. To increase the resolution of scatterometry, short-wavelength radiation like soft X-rays can be used. But, scatterometry with soft X-rays is an inverse problem whose solutions can be ambiguous and its sensitivity should be further increased to determine the shape of even more complicated periodic nanostructures made up of different materials. To achieve unique solutions with smaller uncertainties, scatterometry can leverage the excitation of low-Z materials with soft X-rays. Additional information from soft X-ray fluorescence analysis in a hybrid measurement approach can mitigate the problem of ambiguous solutions from soft X-ray scattering and could further decrease uncertainty. In this work, the hybrid approach is utilized to perform a comparison of solutions from the inverse problem and determine the actual solution over ambiguous solutions.

We report a study on the relationship between structure and electron transport properties of nanoscale graphene/pentacene interfaces. We fabricated graphene/pentacene interfaces from 10-30 nm thick needle-like pentacene nanostructures down to two-three layers (2L-3L) dendritic pentacene islands, and we measured their electron transport properties by conductive atomic force microscopy (C-AFM). The energy barrier at the interfaces, i.e. the energy position of the pentacene highest occupied molecular orbital (HOMO) with respect to the Fermi energy of the graphene and the C-AFM metal tip, are determined and discussed with the appropriate electron transport model (double Schottky diode model and Landauer-Buttiker model, respectively) taking into account the voltage-dependent charge doping of graphene. In both types of samples, the energy barrier at the graphene/pentacene interface is slightly larger than that at the pentacene/metal tip interface, resulting in 0.47-0.55 eV and 0.21-0.34 eV, respectively, for the 10-30 nm thick needle-like pentacene islands, and in 0.92-1.44 eV and 0.67-1.05 eV, respectively, for the 2L-3L thick dendritic pentacene nanostructures. We attribute this differ

Nanoscale solidification is becoming increasingly relevant in applications involving ultra-fast freezing processes and nanotechnology. However, thermal transport on the nanoscale is driven by infrequent collisions between thermal energy carriers known as phonons and is not well described by Fourier's law. In this paper, the role of non-Fourier heat conduction in nanoscale solidification is studied by coupling the Stefan condition to the Guyer--Krumhansl (GK) equation, which is an extension of Fourier's law, valid on the nanoscale, that includes memory and non-local effects. A systematic asymptotic analysis reveals that the solidification process can be decomposed into multiple time regimes, each characterised by a non-classical mode of thermal transport and unique solidification kinetics. For sufficiently large times, Fourier's law is recovered. The model is able to capture the change in the effective thermal conductivity of the solid during its growth, consistent with experimental observations. The results from this study provide key quantitative insights that can be used to control nanoscale solidification processes.

A water soluble amorphous form of silk was made by ultra-short laser pulse irradiation and detected by nanoscale IR mapping. An optical absorption-induced nanoscale surface expansion was probed to yield the spectral response of silk at IR molecular fingerprinting wavelengths with a high ~20 nm spatial resolution defined by the tip of the probe. Silk microtomed sections of 1-5 micrometers in thickness were prepared for nanoscale spectroscopy and a laser was used to induce amorphisation. Comparison of silk absorbance measurements carried out by table-top and synchrotron Fourier transform IR spectroscopy proved that chemical imaging obtained at high spatial resolution and specificity (able to discriminate between amorphous and crystalline silk) is reliably achieved by nanoscale IR. A nanoscale material characterization using synchrotron IR radiation is discussed.

Understanding energy dissipation and transport in nanoscale structures is of great importance for the design of energy-efficient circuits and energy-conversion systems. This is also a rich domain for fundamental discoveries at the intersection of electron, lattice (phonon), and optical (photon) interactions. This review presents recent progress in understanding and manipulation of energy dissipation and transport in nanoscale solid-state structures. First, the landscape of power usage from nanoscale transistors (~10^-8 W) to massive data centers (~10^9 W) is surveyed. Then, focus is given to energy dissipation in nanoscale circuits, silicon transistors, carbon nanostructures, and semiconductor nanowires. Concepts of steady-state and transient thermal transport are also reviewed in the context of nanoscale devices with sub-nanosecond switching times. Finally, recent directions regarding energy transport are reviewed, including electrical and thermal conductivity of nanostructures, thermal rectification, and the role of ubiquitous material interfaces.

It is now common practice to solve the Schrödinger equation to estimate the tunneling current between two electrodes at specified potentials, or the transmission through a potential barrier by assuming that there is an incident, reflected, and transmitted wave. However, these two approaches may not be appropriate for applications with nanoscale circuits. A new approach is required because the electron man-free path may be as long as 68.2 nm in metals so it is possible that the wavefunction may be coherent throughout a nanoscale circuit. We define several algorithms for determining the eigenvalues with different sets of the circuit parameters, thus demonstrating the existence of consistent solutions for nanoscale circuits. We also present another algorithm that is being applied to determine the full solution for nanoscale circuits. All of this is done using only analytical solutions of the Schrödinger equation.

Nanoscale twisted bilayer graphene (TBG) is quite instable and will change its structure to Bernal (or AB-stacking) bilayer with a much lower energy. Therefore, the lack of nanoscale TBG makes its electronic properties not accessible in experiment up to now. In this work, a special confined TBG is obtained in the overlaid area of two continuous misoriented graphene sheets. The width of the confined region of the TBG changes gradually from about 22 nm to 0 nm. By using scanning tunnelling microscopy, we studied carefully the structure and the electronic properties of the nanoscale TBG. Our results indicate that the low-energy electronic properties, including twist-induced van Hove singularities (VHSs) and spatial modulation of local density-of-state, are strongly affected by the translational symmetry breaking of the nanoscale TBG. Whereas, the electronic properties above the energy of the VHSs are almost not influenced by the quantum confinement even when the width of the TBG is reduced to only a single moire spot.

The efficiency of $H_2$ production via water electrolysis is typically limited to the sluggish oxygen evolution reaction (OER). As such, significant emphasis has been placed upon improving the rate of OER through the anode catalyst. More recently, the Open Catalyst 2022 (OC22) framework has provided a large dataset of density functional theory (DFT) calculations for OER intermediates on the surfaces of oxides. When coupled with state-of-the-art graph neural network models, total energy predictions can be achieved with a mean absolute error as low as 0.22 eV. In this work, we interpolated a database of the total energy predictions for all slabs and OER surface intermediates for 4,119 oxide materials in the original OC22 dataset using pre-trained models from the OC22 framework. This database includes all terminations of all facets up to a maximum Miller index of 1. To demonstrate the full utility of this database, we constructed a flexible screening framework to identify viable candidate anode catalysts for OER under varying reaction conditions for bulk, surface, and nanoscale Pourbaix stability as well as material cost, overpotential, and metastability. From our assessment, we were

Topological states of light represent counterintuitive optical modes localized at boundaries of finite-size optical structures that originate from the properties of the bulk. Being defined by bulk properties, such boundary states are insensitive to certain types of perturbations, thus naturally enhancing robustness of photonic circuitries. Conventionally, the N-dimensional bulk modes correspond to (N-1)-dimensional boundary states. The higher-order bulk-boundary correspondence relates N-dimensional bulk to boundary states with dimensionality reduced by more than 1. A special interest lies in miniaturization of such higher-order topological states to the nanoscale. Here, we realize nanoscale topological corner states in metasurfaces with C6-symmetric honeycomb lattices. We directly observe nanoscale topology-empowered edge and corner localizations of light and enhancement of light-matter interactions via a nonlinear imaging technique. Control of light at the nanoscale empowered by topology may facilitate miniaturization and on-chip integration of classical and quantum photonic devices.

Nanophotonic devices seek to generate, guide, and/or detect light using structures whose nanoscale dimensions are closely tied to their functionality. Semiconducting nanowires, grown with tailored optoelectronic properties, have been successfully placed into devices for a variety of applications. However, the integration of photonic nanostructures with electronic circuitry has always been one of the most challenging aspects of device development. Here we report the development of rewritable nanoscale photodetectors created at the interface between LaAlO3 and SrTiO3. Nanowire junctions with characteristic dimensions 2-3 nm are created using a reversible AFM writing technique. These nanoscale devices exhibit a remarkably high gain for their size, in part because of the large electric fields produced in the gap region. The photoconductive response is gate-tunable and spans the visible-to-near-infrared regime. The ability to integrate rewritable nanoscale photodetectors with nanowires and transistors in a single materials platform foreshadows new families of integrated optoelectronic devices and applications.

Modeling nanoscale capacitance presents particular challenge because of dynamic contribution from electrodes, which can usually be neglected in modeling macroscopic capacitance and nanoscale conductance. We present a model to calculate capacitances of nano-gap configurations and define effective capacitances of nanoscale structures. The model is implemented by using a classical atomic charge-dipole approximation and applied to calculate capacitance of a carbon nanotube nano-gap and effective capacitance of a buckyball inside the nano-gap. Our results show that capacitance of the carbon nanotube nano-gap increases with length of electrodes which demonstrates the important roles played by the electrodes in dynamic properties of nanoscale circuits.

Nanoscale solid-solid contacts define a wealth of material behaviours from the electrical and thermal conductivity in modern electronic devices to friction and losses in micro- and nanoelectromechanical systems. For modern ultra-high integration processor chips, power electronic devices and thermoelectrics one of the most essential, but thus far most challenging, aspects is the assessment of the heat transport at the nanoscale sized interfaces between their components. While this can be effectively addressed by a scanning thermal microscopy, or SThM, which demonstrates the highest spatial resolution to thermal transport to date, SThM quantitative capability is undermined by the poorly defined nature of the nanoscale contact between the probe tip and the sample. Here we show that simultaneous measurements of the shear force and the heat flow in the probe-sample junction shows distinct correlation between thermal conductance and maximal shear force in the junction for multiple probe-material combinations. Quantitative analysis of this correlation confirmed the intrinsic ballistic nature of the heat transport in the tip-surface nanoscale contact suggesting that they are, ultimately, c

Based on a simple model, we theoretically show that asymmetric transportation is possible in nanoscale systems experiencing thermal noise without the presence of external fluctuations. The key to this theoretical advance is that the correlation lengths of the thermal fluctuations become significantly long for nanoscale systems. This differs from macroscopic systems in which the thermal noises are usually treated as white noise. Our observation does not violate the second law of thermodynamics, since at nanoscale, extra energy is required to keep the asymmetric structure against thermal fluctuations.

The thermal conductivity of nanostructures needs to be as small as possible so that it will have a greater efficiency for solid-state electricity generation/refrigeration by thermoelectrics. We studied how the period length and the mass ratio affect the thermal conductivity of isotopic nanoscale 3D phononic crystal of Si. Simulation results by equilibrium molecular dynamics show isotopic nanoscale 3D phononic crystal can make a significance reduction on the thermal conductivity of bulk Si at high temperature,1000 K. Size and mass effects are obvious in manipulating thermal conductivity. The thermal conductivity decreases as the period length and mass ratio increases. The phonon dispersion curves show the decrease of group velocities in 3D phononic crystals. The phonon's localization and band gap is clearly shown in spectra of normalized inverse participation ratio in nanoscale 3D phononic crystal structure.

Several equations used to model and characterize the linear region IV characteristics of nanoscale field-effect transistors are derived. The meaning of carrier mobility at the nanoscale is discussed by defining two related quantities, the apparent mobility and the ballistic mobility. The validity of Matthiessen's Rule for relating the apparent ability to the ballistic and diffusive mobilities is examined. Other questions that arise in the analysis and characterization of nanoscale field-effect transistors are also discussed. These notes are intended to pull together in one place some key equations needed to analyze the linear region performance of nanoscale MOSFETs and to point out some errors in previous publications.