Nanocrystals of indium oxide (In$_2$O$_3$) with sizes below 10 nm were prepared in alumina matrixes by using a co-pulverization method. The used substrates such as borosilicate glasses or (100) silicon as well as the substrate temperatures during the deposition process were modified and their effects characterized on the structural and physical properties of alumina-In$_2$O$_3$ films. Complementary investigation methods including X-ray diffraction, optical transmittance in the range 250-1100 nm and transmission electron microscopy were used to analyze the nanostructured films. The crystalline order, morphology and optical responses were monitored as function of the deposition parameters and the post-synthesis annealing. The optimal conditions were found and allow realizing suitable nanostructured films with a major crystalline order of cubic phase for the In$_2$O$_3$ nanocrystals. The optical properties of the films were analyzed and the key parameters such as direct and indirect band gaps were evaluated as function of the synthesis conditions and the crystalline quality of the films.
Since the discovery of superconductivity in nickelate thin films in 2019, the quest for enhancing their $\mathrm{T}_\mathrm{c}$ has been ongoing. Here we provide experimental evidence for $\mathrm{T}_\mathrm{c}$ enhancement in oxygen deficient films on highly reduced and conducting SrTiO$_3$ substrates. $\mathrm{T}_\mathrm{c}$ onset of 50-70 K was found in Meissner and transport measurements, which indicates superconductivity in islands or domains in our films, where $\mathrm{T}_\mathrm{c}$ of zero resistance is obtained at 20-25 K. In addition, we observed a giant paramagnetic-Meissner effect peak at about 48 K, which further supports the existence of a superconductive transition just above it. Furthermore, an asymmetric or nonreciprocal and non-hysteretic superconductive diode effect was observed. The latter effect could be fully polarized, and its polarity could be reversed. Our mixed phase films comprised of many Ruddlesden-Popper $\rm (Nd_{0.8}Sr_{0.2})_{n+1}Ni_nO_{3n+1}$ phases and includes the infinite-layer (IL) phase.
The growth and characterization of Bismuth (Bi) substituted YIG (Bi-YIG, Bi0.1Y2.9Fe5O12) thin films are reported. Pulsed laser deposited (PLD) films with thicknesses ranging from 20 to 150 nm were grown on Gadolinium Gallium Garnet substrates. Two substrate orientations of (100) and (111) were considered. The enhanced distribution of Bi3+ ions at dodecahedral site along (111) is observed to lead to an increment in lattice constant from 12.379 angstrom in (100) to 12.415 angstrom in (111) oriented films. Atomic force microscopy images showed decreasing roughness with increasing film thickness. Compared to (100) grown films, (111) oriented films showed an increase in ferromagnetic resonance linewidth and consequent increase in Gilbert damping. The lowest Gilbert damping values are found to be (1.06) * 10E-4 for (100) and (2.30) * 10E-4 for (111) oriented films with thickness of 150 nm. The observed values of extrinsic linewidth, effective magnetization, and anisotropic field are related to thickness of the films and substrate orientation. In addition, the in-plane angular variation established four-fold symmetry for the (100) deposited films unlike the case of (111) deposited films.
The structural crystal features, electron transport and magnetotransport of the epitaxial strontium iridate (SrIrO$_3$) and iridate/manganite SrIrO$_3$/La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructure have been investigated. The influence of epitaxial strain relaxation caused by the lattice mismatch between SrIrO$_3$ films and five substrates: SrTiO$_3$, NdGaO$_3$, (LaAlO$_3$)$_{0.3}$(Sr$_2$TaAlO$_6$)$_{0.7}$, LaAlO$_3$, and Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$-PbTiO$_3$ on electron and magnetic transport has been observed. A pronounced impact of strong spin-orbit interaction on characteristics of SrIrO$_3$ films has been revealed by means of X-ray photoelectron spectroscopy, magnetoresistance and Hall-resistance measurements at temperatures T = 2-300 K. These findings highlight the tunability of spin-orbit-driven transport phenomena in strain-controlled SrIrO$_3$-based epitaxial systems, relevant for future spintronic oxide heterostructures. The contribution of Kondo scattering on temperature dependence of SrIrO$_3$ films resistance was observed.
Brownian thermal noise of thin-film coatings is a fundamental limit for high-precision experiments based on optical resonators such as gravitational-wave interferometers. Here we present the results of a research activity aiming to develop lower-noise ion-beam sputtered silicon nitride thin films compliant with the very stringent requirements on optical loss of gravitational-wave interferometers. In order to test the hypothesis of a correlation between the synthesis conditions of the films and their elemental composition and optical and mechanical properties, we varied the voltage, current intensity and composition of the sputtering ion beam, and we performed a broad campaign of characterizations. While the refractive index was found to monotonically depend on the beam voltage and linearly vary with the N/Si ratio, the optical absorption appeared to be strongly sensitive to other factors, as yet unidentified. However, by systematically varying the deposition parameters, an optimal working point was found. Thus we show that the loss angle and extinction coefficient of our thin films can be as low as $(1.0 \pm 0.1) \times 10^{-4}$ rad at $\sim$2.8 kHz and $(6.4 \pm 0.2) \times 10^{-6
Monatomic antimony thin films have recently attracted attention for applications in phase change memory, nanophotonics, and 2D materials. Although some promising results have been reported, the true potential of Sb thin films is still hindered by the scalability issue and the lack of reliable bottom-up production. Here we demonstrate the growth of Sb thin films on a lattice-matching and amorphous substrates using pulsed laser deposition (PLD). C-axis out-of-plane textured Sb thin films were successfully deposited on Sb$_2$Te$_3$ and SiO$_2$\Si$_3$N$_4$ substrates. In the case of growth on Sb$_2$Te$_3$, we show that an intermediate phase is formed at the Sb$_2$Te$_3$-Sb interface playing a crucial role in forming a solid coupling and thus maintaining epitaxy leading to the production of high-quality Sb thin films. A 3 - 4 nm amorphous Sb seed layer was used to induce texture and suitable surface termination for the growth of Sb thin films on amorphous substrates. The deposition parameters were fine-tuned, and the growth was monitored in situ by a Reflective High Energy Electron Diffraction (RHEED). Scanning/Transmission Electron Microscopy (S/TEM) unveiled the local structure of pro
At low temperature T we expect vacuum tunneling processes to occur in superfluid $^{4}$ He films. We distinguish between extrinsic processes, in which single vortices nucleate by tunneling off boundaries in the system, and intrinsic processes, in which vortex/anti-vortex pairs nucleate far from boundaries. It is crucial to incorporate the varying effective mass of the vortex in tunneling calculations. The intrinsic processes are the superfluid analogue of the Schwinger mechanism in quantum field theory; here they appear as a quantum phase transition at T = 0, driven by an external supercurrent. We calculate the tunneling rate for these processes, and describe a means of testing the predictions using a specific vortex counting experiment.
Spray deposition and inkjet printing of various nanostructures are emerging complementary methods for creating conductive coatings on different substrates. In comparison to established deposition techniques like vacuum metal coating and lithography-based metallization processes, spray deposition and inkjet printing benefit from significantly simplified equipment. However, there are number of challenges related to peculiar properties and behaviour of nanostructures that require additional studies. In present work, we investigate electroconductive properties and sintering behaviour of thin films produced from nanostructures of different metals (Ag, Cu and Cu-Ag) and different shapes (nanowires and spherical nanoparticles), and compare them to the reference Ag and Cu magnetron deposited films. Synthesized nanostructures were studied with transmission electron microscopy. Morphology and crystallinity of produced metal films were studied with scanning electron microscopy and X-ray diffraction. The electrical parameters were measured by the van der Pauw method. All nanowires-based films provided high conductivity and required only modest thermal treatment (200 C). To achieve sufficient s
Several organic cations have been used to passivate perovskite films; however, selecting the optimal cation remains challenging. In this work, we carried out density functional theory calculations to understand the effects induced by 17 different organic cations on the passivation (P-cations) of thin two-dimensional P2MAn-1PbnI3n+1 perovskites films, where n = 1 and 2. We found that the interactions between different types of P-cations and the inorganic slab affect the length and angles of the bonds within the inorganic framework (PbI6-octahedra). In general, the binding mechanism includes the interactions of organic cations with the inorganic framework, which leads to the accumulation of electron density within the halides, indicative of Bronsted--Lowry acid-base interactions. Oxygenated groups facilitate additional H-bond formation through -OH and -COOH groups, promoting the localization of the electron density between layers and improving the energetic stability of the system. Based on the results and analysis, we found that three P-cations might have higher potential for real-life applications, namely 4-fluorophenylethylammonium (FPEA), phenylethylammonium (PEA) and butylammoni
We report on the structural and superconducting properties of nanocrystalline tungsten thin films growth by sputtering at room temperature with an N2:Ar mixture (N2 from 3% to 50%). The crystalline phases were identified by comparing pristine and thermal annealed thin films. For N2/(Ar+N2) mixtures between 3 and 10 %, the films display nanocrystalline beta-W phase. Coexistence of beta-W and W2N phases are observed for gas mixtures with N2 between 20 % and 40%. A detailed study of the superconducting properties as function of the thickness was performed for W films growth with 8 % N2 mixtures. For this concentration, the nitrogen atoms increase the disorder at the nanoscale reducing the grain size and avoiding the crystallization of alpha-W. The superconducting critical temperature (Tc = 4.7 K) is thickness independent for films thicker than ~ 17 nm. Below this thickness, the Tc value decreases systematically being 3.1 K for 4 nm thick films. Our study provides a simple method for the fabrication of nanocrystalline beta-W thin films with potential applications in superconducting devices.
We present the structural and transport properties of La$_{1-x}$Sr$_x$Co$_{1-y}$Nb$_y$O$_3$ ($y=$ 0.1 and $x=$ 0; $y=$ 0.15 and $x=$ 0.3) thin films grown on (001) orientated single crystalline ceramic substrates to investigate the effect of lattice induced compressive and tensile strain. The high resolution x-ray diffraction measurements, including $θ$-2$θ$ scan, $Φ$-scan, and reciprocal space mapping, affirm single phase; four-fold symmetry; good quality of deposited thin films. The atomic force micrographs confirm that these films have small root mean square roughness in the range of $\sim$0.5--7~nm. We observed additional Raman active modes in the films owing to the lowered crystal symmetry as compared to the bulk. More interestingly, the temperature dependent dc-resistivity measurements reveal that films become insulating due to induced lattice strain in comparison to bulk, however for the larger compressive strained films conductivity increase significantly owing to the higher degree of $p-d$ hybridization and reduction in bandwidth near the Fermi level.
We have studied the effects of oxygen on hydrogenated amorphous/crystalline silicon films in terms of their structural and optical properties. Different hydrogenated silicon oxide (SiO:H) and silicon (Si:H) films are fabricated between microcrystalline and amorphous transition region. X-ray diffraction, Raman, FTIR and UV-Vis emission spectrometry have been used to characterize different films. A comparison of the results with those of different types of films like hydrogenated amorphous silicon oxide (a-SiO:H), hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon ($μ$c-Si:H) films reveal their superiority as an excellent substance for solar cell. X-ray diffraction, FTIR and Raman spectral analysis show that difference of the H dilution effect has a major effect on the structure of the film and the optical properties. Photoluminescence analysis of amorphous silicon-oxygen and silicon-hydride alloy films has established their efficient application appropriate as Si based light emitting devices. A large optical band gap of 1.83 eV and appearance of strong photo luminescence at 2.0 eV validates the applicability of a-SiO:H film as a better alternative for the solar cel
Vanadium dioxide is a complex oxide material, which shows large resistivity and optical reflectance change while transitioning from the insulator to metal phase at ~68 °C. In this work, we use a modified atmospheric thermal oxidation method to oxidize RF-sputtered Vanadium films. Structural, surface-morphology and phase-transition properties of the oxidized films as a function of oxidation duration are presented. Phase-pure VO2 films are obtained by oxidizing ~130 nm Vanadium films in short oxidation duration of ~30 seconds. Compared to previous reports on VO2 synthesis using atmospheric oxidation of Vanadium films of similar thickness, we obtain a reduction in oxidation duration by more than one order. Synthesized VO2 thin film shows resistance switching of ~3 orders of magnitude. We demonstrate optical reflectance switching in long-wave infrared wavelengths in VO2 films synthesized using atmospheric oxidation of Vanadium. The extracted refractive index of VO2 in the insulating and in the metallic phase is in good agreement with VO2 synthesized using other methods. The considerable reduction in oxidation time of VO2 synthesis while retaining good resistance and optical switching p
The fabrication of optically smooth thin Sn films by vacuum or electrodeposition techniques is usually challenging. Little has been published on how to address this challenge mainly because very few applications require such smooth Sn surfaces. The excitation of surface plasmon polaritons on Sn surfaces by prism-based methods represents a case that requires very smooth surfaces and has motivated this work. It is shown that the deposition rate and the substrate temperature of a vacuum evaporation method can be optimized to obtain very smooth Sn films and this is supported by direct imaging evidence from atomic force microscopy and scanning electron microscopy.
Grain boundaries in Sr-doped LaMnO3 thin films have been shown to strongly influence the electronic and oxygen mass transport properties, being able to profoundly modify the nature of the material. The unique behaviour of the grain boundaries can be correlated with substantial modifications of the cation concentration at the interfaces, which can be tuned by changing the overall cationic ratio in the films. In this work, we study the electronic properties of La0.8Sr0.2Mn1-yO3 thin films with variable Mn content. The influence of the cationic composition on the grain boundary and grain bulk electronic properties is elucidated by studying the manganese valence state evolution using spectroscopy techniques and by confronting the electronic properties of epitaxial and polycrystalline films. Substantial differences in the electronic conduction mechanism are found in the presence of grain boundaries and depending on the manganese content. Moreover, the unique defect chemistry of the nanomaterial is elucidated by measuring the electrical resistance of the thin films as a function of oxygen partial pressure, disclosing the importance of the cationic local non-stoichiometry on the thin film
In this Chapter we review our latest results on magnetic (AC susceptibility) and transport (resistivity) properties of Pr1.85Ce0.15CuO4 (PCCO) and Sm1.85Ce0.15CuO4 (SCCO) thin films grown by pulsed laser deposition technique. Three main topics of our studies will be covered. We start with a thorough discussion of the pairing symmetry mechanisms in optimally-doped SCCO thin films based on the extracted with high accuracy temperature profiles of penetration depth. In particular, we found that above and below a crossover temperature T*=0.22T_C, our films are best-fitted by a linear and quadratic dependencies, respectively, with physically reasonable values of d-wave node gap parameter and paramagnetic impurity scattering rate. Our next topic is related to the flux distribution in our films. More precisely, we present a comparative study on their pinning ability at low magnetic fields extracted from their AC susceptibilities. Depending on the level of homogeneity of our films, two different types of the irreversibility line have been found. The obtained results are described via the critical-state model taking into account the low-field grain-boundary pinning. And finally, we demonstra
Magnesium nickel hydride films have earlier been suggested for several optoelectronic applications, but the optical properties and band gap have not been firmly established. In this work, the dielectric functions and the optical band gaps of thin films of Mg2NiH4 have been determined experimentally from optical modeling using spectroscopic ellipsometry and spectrophotometry in the photon energy range between 0.7 and 4.2 eV. Samples were prepared by reactive sputtering, resulting in a single-layer geometry that could easily be studied by ellipsometry. Crystalline samples were prepared by annealing the amorphous films ex-situ. The resulting films remained in the high temperature cubic Mg2NiH4 structure even after cooling to room temperature. Tauc analysis of the dielectric function shows that Mg2NiH4 exhibits a band gap of 1.6 eV for amorphous structure films and 2.1 eV for its cubic crystalline structure.
Thin film metallic glasses undergoing devitrification can form partially crystallized or fully crystallized materials with novel structural and magnetic properties. The development of desired and tunable properties of such systems drives the need to understand the mechanism of their thermal evolution at the atomic level. Co-sputtered amorphous Ni-Zr alloy thin films which were thermally annealed in steps of 200 deg C from room temperature up to 800 deg C, were observed to undergo an amorphous-to-crystalline transformation. Evolutions in local atomic structure, including oxide formation and depletion during this devitrification process, were determined using a combination of X-ray reflectivity (XRR), grazing incidence X-ray diffraction (GIXRD) and Extended X-ray Absorption Fine Structure (EXAFS) techniques. The most probable phase of the alloy was determined as Ni7Zr2; undergoing a polymorphous transformation. The slight oxide content in the films was also noted to decrease rapidly as annealing proceeded; leaving the crystallization pathway unhindered. Modelling and analyses of XRR and GIXRD data showed that film thickness decreased with annealing while long range order increased. P
Epitaxial titanium diboride thin films have been deposited on sapphire substrates by Pulsed Laser Ablation technique. Structural properties of the films have been studied during the growth by Reflection High Energy Electron Diffraction (RHEED) and ex-situ by means of X-ray diffraction techniques; both kinds of measurements indicate a good crystallographic orientation of the TiB2 film both in plane and along the c axis. A flat surface has been observed by Atomic Force Microscopy imaging. Electrical resistivity at room temperature resulted to be five times higher than the value reported for single crystals. The films resulted to be also very stable at high temperature, which is very promising for using this material as a buffer layer in the growth of magnesium diboride thin films.
Vanadium oxide films and fibers have been fabricated by the acetylacetonate sol-gel method followed by annealing in wet nitrogen. The samples are characterized by X-ray diffraction and electrical conductivity measurements. The effects of a sol aging, the precursor decomposition and the gas atmosphere composition on the annealing process, structure and properties of the films are discussed. The two-stage temperature regime of annealing of amorphous films in wet nitrogen for formation of the well crystallized VO2 phase is chosen: 1) 25-550 C and 2) 550-600 C. The obtained films demonstrate the metal-insulator transition and electrical switching. Also, the effect of the polyvinylpyrrolidone additive concentration and electrospinning parameters on qualitative (absence of defects and gel drops) and quantitative (length and diameter) characteristics of vanadium oxide fibers is studied.