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Flexoelectricity, an electromechanical coupling between strain gradient and polarization, offers a promising dimension to enrich silicon-based devices. Although the flexoelectricity of silicon is known, some fundamental aspects remain ambiguous, such as the discrepancy between experimental results and theoretical predictions, the influence of doping concentration, and the role of the bandgap. Here, we measured the flexoelectricity of intrinsic and heavily doped Si over the temperature range of 223 -473 K. The flexoelectric coefficient is of 2.6 μC/m and barely varies with temperature in doped silicon, while in intrinsic silicon it varies by nearly two orders of magnitude from 15.2 nC/m to 1.8 μC/m as temperature increases. We show that their different temperature dependencies correspond to the temperature-insensitive donor ionization in doped silicon and the temperature-sensitive intrinsic excitation in intrinsic silicon, with the latter captured by a quantitative relationship between flexoelectricity, temperature and bandgap. Furthermore, similar experimental results on germanium (Ge) suggest the universality of this relationship in first-generation semiconductors. These findings

The majority of silicon photonics is built on silicon-on-insulator (SOI) wafers while the majority of electronics, including CPUs and memory, are built on bulk silicon wafers, limiting broader acceptance of silicon photonics. This discrepancy is a result of silicon photonics's requirement for a single-crystalline silicon (c-Si) layer and a thick undercladding for optical guiding that bulk silicon wafers to not provide. While the undercladding problem can be partially addressed by substrate removal techniques, the complexity of co-integrating photonics with state-of-the-art transistors and real estate competition between electronics and photonics remain problematic. We show here a platform for deposited GHz silicon photonics based on polycrystalline silicon with high optical quality suitable for high performance electro-optic devices. We demonstrate 3 Gbps polysilicon electro-optic modulator fabricated on a deposited polysilicon layer fully compatible with CMOS backend integration. These results open up an array of possibilities for silicon photonics including photonics on DRAM and flexible substrates.

Future hadron collider experiments will require sensing materials that withstand stronger radiation fields. Therefore, either a frequent replacement of detectors, a significant increase in radiation hardness of Silicon, or a shift to different materials is needed. Wide-bandgap materials are a natural choice, due to their significantly reduced leakage currents, even after irradiation. In recent years, substantial progress in the production of high-quality monocrystalline Silicon Carbide of the 4H polytype has led to a renewed interest in this material. In this article, a study of electrically active defects in a n-type epitaxial 4H Silicon Carbide diode is presented. By employing spectroscopical measurement methods, like Deep-Level Transient Spectroscopy (DLTS) and Thermally Stimulated Currents (TSC), energy levels in the bandgap are investigated. Defect parameters like concentration, activation energy and capture cross-section are stated. A simulation framework was utilised to compare and match the results from the two methods. This study is made in the context of a study of radiation hardness of 4H Silicon Carbide sensors. Other studies investigating macroscopic properties of the

This definitive research memoria presents a comprehensive, mathematically verified paradigm for neural communication with Bitcoin mining Application-Specific Integrated Circuits (ASICs), integrating five complementary frameworks: thermodynamic reservoir computing, hierarchical number system theory, algorithmic analysis, network latency optimization, and machine-checked mathematical formalization. We establish that obsolete cryptocurrency mining hardware exhibits emergent computational properties enabling bidirectional information exchange between AI systems and silicon substrates. The research program demonstrates: (1) reservoir computing with NARMA-10 Normalized Root Mean Square Error (NRMSE) of 0.8661; (2) the Thermodynamic Probability Filter (TPF) achieving 92.19% theoretical energy reduction; (3) the Virtual Block Manager achieving +25% effective hashrate; and (4) hardware universality across multiple ASIC families including Antminer S9, Lucky Miner LV06, and Goldshell LB-Box. A significant contribution is the machine-checked mathematical formalization using Lean 4 and Mathlib, providing unambiguous definitions, machine-verified theorems, and reviewer-proof claims. Key theorems

At the High Luminosity Large Hadron Collider (HL-LHC), silicon pixel detectors will be exposed to radiation fluences about 5 to 10 times larger than those experienced by the current innermost pixel layers up to today. Signal loss will be the main limitation to tracking and vertexing performance due to radiation damage in hybrid pixel detectors, with the increase in leakage current and depletion voltage posing severe constraints on operating conditions. It is important to have reliable predictions for all observables - such as charge collection performance, leakage current level and breakdown voltage - after irradiation, in order to estimate operational voltage values and to test the robustness of tracking algorithms. In this paper, the predictions of Silvaco and Synopsys TCAD device simulations are compared when the surface and bulk defects and traps of the ``Perugia radiation damage model'' are included. The results are quite promising regarding leakage current, depletion voltage, electric field and trap statistics, at two distinct reference temperatures and fluences.

Silicon-based semiconductor nanofabrication technology has achieved a remarkable level of sophistication and maturity, and color centers in silicon naturally inherit this advantage. Besides, their emissions appear in telecommunication bands, which makes them play a crucial role in the construction of quantum network. To address the challenge of weak spontaneous emission, different optical cavities are fabricated to enhance the emission rate. However, the relative location between cavity and emitter is random, which greatly reduce the success probability of enhancement. Here, we report on a fluorescence-localization technique (FLT) for precisely locating single G center in silicon and embedding it in the center of a circular Bragg grating cavity in situ, achieving 240-times improvement of the success probability. We observe a 30-fold enhancement in luminescence intensity, 2.5-fold acceleration of the emission from single G center, corresponding to a Purcell factor exceeding 11. Our findings pave the way for the large-scale integration of quantum light sources including those with spins.

The aim of this work is to develop high precision Time-of-Flight (TOF) devices based on high refractive index solid Cherenkov radiators read out by silicon photomultipliers (SiPMs). Cherenkov light is prompt and therefore ideal for reaching the intrinsic timing limits of TOF systems. By utilizing a thin, high-refractive-index radiator a nearly instantaneous signal is generated by particles exceeding the Cherenkov threshold. In order to achieve the ultimate time resolution, we carried out a rigorous optimization of the radiator material and geometry, alongside the efficiency of the optical coupling to the SiPM sensors. The key factors limiting the time resolution were characterized by comprehensive Monte Carlo simulations, subsequently validated against experimental beam test data. We assembled small-scale prototypes instrumented with various Hamamatsu SiPM arrays sensors with pitches ranging from 1.3 to 3 mm coupled with various window materials, such as fused silica and MgF2, featuring various thickness values. The prototypes were successfully tested in beam test campaigns at the CERN-PS T10 beam line. The data were collected with a complete chain of front-end and readout electron

Silicon nanoribbons (SiNRs), characterized by a pentagonal structure composed of silicon atoms, host one-dimensional (1D) Dirac Fermions and serve as a minimalist atomic template for adsorbing various heteroatoms. Alkali-metal (AM) atoms, such as Na and K, with electronic structures comparable to those of hydrogen are of particular interest for such adsorption studies. However, the adsorption of AM atoms on SiNRs and its tunation on the properties of SiNRs have not yet been fully explored. In this study, we examined the adsorption of K atoms on high-aspect-ratio SiNRs and the resultant electronic properties using a combination of scanning tunneling microscopy (STM) and density functional theory calculations. K atoms prefer to adsorb on double- and multi-stranded SiNRs owing to the low adsorption energies at these sites. Each K atom and its three nearest Si atoms exhibit a triangular morphology resulting from charge transfer between K and Si atoms, as verified by theoretical calculations. As the K coverage of the SiNRs increased, the K atoms organize into 1D zigzag chains on the SiNRs. Moreover, K adsorption on the SiNRs was determined to be reversible. The deposition of K atoms on

Silicon, one of the most abundant elements found on Earth, has been an excellent choice of the semiconductor industry for ages. Despite it's remarkable applications in modern semiconductor-based electronic devices, the potential of cubic silicon in superconducting electronics remained a challenge because even heavily doped silicon crystals do not superconduct under normal conditions. It is apparent that if superconductivity can be introduced in cubic silicon, that will bring a breakthrough in low-dissipation electronic circuitry. Motivated by this, attempts have been made by several research groups to induce superconductivity in silicon through a number of different routes. Some of the other structural phases of silicon like $β$-Sn and simple hexagonal are, however, known to display superconductivity. In the present review article, various theoretical and experimental aspects of superconductivity in silicon are discussed. Superconductivity in different phases and different structural forms of silicon are also reviewed. We also highlight the potential of superconducting phases of silicon for technological applications in super-conducting nano-electronics.

The role of additives such as FEC in extending the calendar life of silicon anodes beyond the cycling benefits is still not fully understood. Herein, the calendar life of high-loading Si (80 wt%) using baseline 1.2 M LiPF6 in EC-EMC electrolyte versus adding 10 wt% FEC is investigated over months. Over 8 days of aging, FEC leads to a 13-fold reduction in irreversible capacity loss in Si-LiFePO4 full cells. Cells without FEC are projected to fall below 80% of their initial capacity within approx. 22 days versus approx. 279 days with FEC. Symmetric Si-Si cells from harvested electrodes show greater increase in interphase resistance without FEC, whereby an increase of 10.81 Ohms is measured for 0 wt% FEC vs. only 3.37 Ohms for 10 wt% FEC over 2 months. Power law modeling of this long-term interphase resistance finds mixed transport-reaction growth behavior in FEC-free cells, suggesting significant dissolution, whereas cells with 10 wt% FEC added display a diffusion-controlled impedance growth behavior, suggesting a robust surface passivation film. Post-mortem FTIR and XPS confirm polycarbonate enrichment of the SEI, which was discovered to predominantly emerge from FEC self-polymeriza

Silicon vacancy in silicon carbide has drawn much attention for various quantum sensing. However, most of the previous experiments are achieved using confocal scanning systems, which limit its applications in practical applications. In this work, we demonstrate a compact fiber-integrated silicon carbide silicon vacancy-based vector magnetometer at room temperature. First, we effectively couple the silicon vacancy in a tiny silicon carbide slice to an optical fiber tip and realize the readout of the spin signal through the fiber at the same time. We then study the optically detected magnetic resonance spectra at different laser and microwave powers, obtaining an optimized magnetic field sensitivity of 12.3 μT/Hz1/2. Based on this, the magnetometer is performed to measure the strength and polar angle of an external magnetic field, respectively. Through these experiments, we have paved the way for fiber-integrated silicon vacancy-based magnetometer applications in practical environments such as geophysics and biomedical sensing.

Hydrogenated amorphous silicon is well known for its various alloys and wide ranging opto-electronic properties. Hydrogenated silicon sub-oxide (aSiO:H) is one of them. The effect of boron doping on optoelectronic properties of the aSiO:H have been investigated with intrinsic and delta-doped materials. The Urbach energy of the tail and midgap defect states of the intrinsic and lightly doped(0.01% gas phase doping) materials were found to be 103, 151 meV and 8.19x1016 , 5.47x1017 cm-3 respectively. As a result of the 0.01% doping a reduction in optical gap was observed from 1.99 to 1.967 eV along with a shift in Fermi level by 0.258eV, indicating an efficient boron doping of the intrinsic silicon oxide material. The lightly doped p-type layer was used to simulate device characteristics in amorphous silicon (aSi:H) and HIT-type solar cell. In the aSi:H device the power conversion efficiency (PCE) was moderate while in a HIT-type device the PCE was 26.4%. It indicated that a good quality silicon oxide layer can be an attractive passivation layer for a HIT type device. It further indicated that defect density of the passivation layer can have a significant impact on performance of a HI

The fluorescence of silicon clusters is reviewed. Atomic clusters of silicon have been at the focus of research for several decades because of the relevance of size effects for material properties, the importance of silicon in electronics and the potential applications in bio-medicine. To date numerous examples of nanostructured forms of fluorescent silicon have been reported. This article introduces the principles and underlying concepts relevant for fluorescence of nanostructured silicon such as excitation, energy relaxation, radiative and non-radiative decay pathways and surface passivation. Experimental methods for the production of silicon clusters are presented. The geometric and electronic properties are reviewed and the implications for the ability to emit fluorescence are discussed. Free and pure silicon clusters produced in molecular beams appear to have properties that are unfavourable for light emission. However, when passivated or embedded in a suitable host, they may emit fluorescence. The current available data show that both quantum confinement and localised transitions, often at the surface, are responsible for fluorescence. By building silicon clusters atom by ato

We have studied the effects of oxygen on hydrogenated amorphous/crystalline silicon films in terms of their structural and optical properties. Different hydrogenated silicon oxide (SiO:H) and silicon (Si:H) films are fabricated between microcrystalline and amorphous transition region. X-ray diffraction, Raman, FTIR and UV-Vis emission spectrometry have been used to characterize different films. A comparison of the results with those of different types of films like hydrogenated amorphous silicon oxide (a-SiO:H), hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon ($μ$c-Si:H) films reveal their superiority as an excellent substance for solar cell. X-ray diffraction, FTIR and Raman spectral analysis show that difference of the H dilution effect has a major effect on the structure of the film and the optical properties. Photoluminescence analysis of amorphous silicon-oxygen and silicon-hydride alloy films has established their efficient application appropriate as Si based light emitting devices. A large optical band gap of 1.83 eV and appearance of strong photo luminescence at 2.0 eV validates the applicability of a-SiO:H film as a better alternative for the solar cel

Hydrogenated amorphous silicon alloy films are generally deposited by radio frequency plasma enhanced chemical vapor deposition (RF PECVD) technique on various types of substrates. Generally it is assumed that film quality remains unchanged when deposited on textured or non-textured substrates. Here we analyzed the difference in growth of thin film silicon layers when deposited in a textured and a non-textured surface. In this investigation characteristics of two solar cells were compared, where one cell was prepared on a textured surface ( Cell-A) while the other prepared on a non-textured surface (Cell-B). Defect analysis of the devices were carried out by simulation and device modeling. It shows that the intrinsic film deposited on a textured surface was more defective ($2.4\times 10^{17}$ cm$^{-3}$) than that deposited on a flat surface ($3.2\times 10^{16}$ cm$^{-3}$). Although the primary differences in these two cells were thickness of the active layer and nature of surface texturing, the simulation results show that thin film deposited on a textured surface may acquire an increased defect density than that deposited on a flat surface. Lower effective flux density of $SiH_{3}

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime me

Precise generation of spin defects in solid-state systems is essential for nanostructure fluorescence enhancement. We investigated a method for creating single silicon vacancy defect arrays in silicon carbide using a helium-ion microscope. Maskless and targeted generation can be realized by precisely controlling the focused He+ ion beam with an implantation uncertainty of 60 nm. The generated silicon vacancies were identified by measuring the optically detected magnetic resonance spectrum and room temperature photoluminescence spectrum. We systematically studied the effects of the implantation ion dose on the generated silicon vacancies. After optimization, a conversion yield of ~ 6.95 % and a generation rate for a single silicon vacancy of ~ 35 % were realized. This work paves the way for the integration and engineering of color centers to photonic structures and the application of quantum sensing based on spin defects in silicon carbide.

Brownian thermal noise of thin-film coatings is a fundamental limit for high-precision experiments based on optical resonators such as gravitational-wave interferometers. Here we present the results of a research activity aiming to develop lower-noise ion-beam sputtered silicon nitride thin films compliant with the very stringent requirements on optical loss of gravitational-wave interferometers. In order to test the hypothesis of a correlation between the synthesis conditions of the films and their elemental composition and optical and mechanical properties, we varied the voltage, current intensity and composition of the sputtering ion beam, and we performed a broad campaign of characterizations. While the refractive index was found to monotonically depend on the beam voltage and linearly vary with the N/Si ratio, the optical absorption appeared to be strongly sensitive to other factors, as yet unidentified. However, by systematically varying the deposition parameters, an optimal working point was found. Thus we show that the loss angle and extinction coefficient of our thin films can be as low as $(1.0 \pm 0.1) \times 10^{-4}$ rad at $\sim$2.8 kHz and $(6.4 \pm 0.2) \times 10^{-6

Silicon Carbide is a promising host material for spin defect based quantum sensors owing to its commercial availability and established techniques for electrical and optical microfabricated device integration. The negatively charged silicon vacancy is one of the leading spin defects studied in silicon carbide owing to its near telecom photoemission, high spin number, and nearly temperature independent ground state zero field splitting. We report the realization of nanoTesla shot-noise limited ensemble magnetometry based on optically detected magnetic resonance with the silicon vacancy in 4H silicon carbide. By coarsely optimizing the anneal parameters and minimizing power broadening, we achieved a sensitivity of 3.5 nT/$\sqrt{Hz}$. This was accomplished without utilizing complex photonic engineering, control protocols, or applying excitation powers greater than a Watt. This work demonstrates that the silicon vacancy in silicon carbide provides a low-cost and simple approach to quantum sensing of magnetic fields.