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The complete subgap defect density of states (DoS) is measured using the ultrabroadband (0.15 to 3.5 eV) photoconduction response from p-type thin-film transistors (TFTs) of tin oxide, SnO, and copper oxide, Cu$_2$O. The TFT photoconduction spectra clearly resolve all bandgaps that further show the presence of interfacial and oxidized minority phases. In tin oxide, the SnO majority phase has a small 0.68 eV bandgap enabling ambipolar or p-mode TFT operation. By contrast, in copper oxide TFTs, an oxidized minority phase with a 1.4 eV bandgap corresponding to CuO greatly reduces the channel hole mobility at the charge accumulation region. Three distinct subgap DoS peaks are resolved for the copper oxide TFT and are best ascribed to copper vacancies, oxygen-on-copper antisites, and oxygen interstitials. For tin oxide TFTs, five subgap DoS peaks are observed and are similarly linked to tin vacancies, oxygen vacancies, and oxygen interstitials. Unipolar p-type TFT is achieved in tin oxide only when the conduction band-edge defect density peak ascribed to oxygen interstitials is large enough to suppress any n-mode conduction. Near the valence band edge in both active channel materials, t

Thin films have found a wide variety of applications because of the substantial improvement in their properties as compared to bulk metals. Metal oxide thin films are increasingly being used in various fields and are especially important in functional applications. They can be either p- or n-type in nature depending on the materials, dopants, and preparation route. Copper oxide is an example of a p-type metal oxide, which finds application in solar cells, photo-electrochemical cells, gas sensors, supercapacitors, and thermoelectric touch detectors. Both copper (I) and copper (II) oxides can be grown with the lower valence state oxide stable at low temperature and the higher valence state obtained by annealing at higher temperatures. In this work, we modify the optical and electrical properties of copper oxide thin films, by doping of silver through a thermal evaporation process route. Copper is thermally evaporated onto the substrate and silver is co-evaporated during this process. The films are then annealed in ambient under various conditions to obtain copper oxide. Structural and functional comparison is made between undoped and silver doped copper oxide thin films, prepared und

We show that direct laser writing in aqueous silver nitrate with a $λ$ = 1030 nm femtosecond laser results in deposition of a mixture of silver oxide and silver, in contrast to the pure silver deposition previously reported with 780 nm femtosecond direct laser writing. However, adding photoinitiator prevents silver oxide formation in a concentration-dependent manner. As a result, the resistivity of the material can also be controlled by photoinitiator concentration with resistivity being reduced from approximately 9e-3 $Ω$m to 3e-7 $Ω$m. Silver oxide peaks dominate the X-ray diffraction spectra when no photoinitiator is present, while the peaks disappear with photoinitiator concentrations above 0.05 wt%. A THz polarizer and metamaterial are printed as a demonstration of silver oxide printing.

We report on atomic-scale analyses of nucleation and growth of Zr oxide precipitates and the microstructural evolution of internally oxidized Nb3Sn wires for high-field superconducting magnet applications, utilizing atom probe tomography (APT), transmission electron microscopy (TEM), and first-principles calculations. APT analyses reveal that prior to interfacial reactions at Nb/Nb3Sn interfaces, Zr atoms in an unreacted Nb-1Zr-4Ta (at.%) alloy form clusters with O atoms owing to their high affinity for oxygen and are segregated at grain boundaries (GBs) in the Nb grains. Then, nucleation of Zr oxide precipitates occurs in Nb3Sn and at Nb3Sn/Nb interfaces, driven by the small solubility of Zr and O in Nb3Sn compared to Nb. Quantitative APT and TEM analyses of Zr oxide precipitates in Nb3Sn layers demonstrate the nucleation, growth, and coarsening processes of Zr oxide precipitates in Nb3Sn layers. A high number density of Zr oxide nanoprecipitates is observed in the Nb3Sn layers, ~10^23 per m^3, with a mean precipitate diam. <10 nm at 625 oC and 700 oC, which provide pinning centers for grain refinement of Nb3Sn, <100 nm diam., and serve as pinning sites for fluxons. First-pr

Stochastic inhomogeneous oxidation is an inherent characteristic of copper (Cu), often hindering color tuning and bandgap engineering of oxides. Coherent control of the interface between metal and metal oxide remains unresolved. We demonstrate coherent propagation of an oxidation front in single-crystal Cu thin film to achieve a full-color spectrum for Cu by precisely controlling its oxide-layer thickness. Grain boundary-free and atomically flat films prepared by atomic-sputtering epitaxy allow tailoring of the oxide layer with an abrupt interface via heat treatment with a suppressed temperature gradient. Color tuning of nearly full-color RGB indices is realized by precise control of oxide-layer thickness; our samples covered ~50.4% of the sRGB color space. The color of copper/copper oxide is realized by the reconstruction of the quantitative yield color from oxide pigment (complex dielectric functions of Cu2O) and light-layer interference (reflectance spectra obtained from the Fresnel equations) to produce structural color. We further demonstrate laser-oxide lithography with micron-scale linewidth and depth through local phase transformation to oxides embedded in the metal, provid

The utilization of orbital transport provides a versatile and efficient spin manipulation mechanism. As interest in orbital-mediated spin manipulation grows, we face a new issue to identify the underlying physics that determines the efficiency of orbital torque (OT). In this study, we systematically investigate the variation of OT governed by orbital Rashba-Edelstein effect at the Cu/Oxide interface, as we change the Oxide material. We find that OT varies by a factor of ~2, depending on the Oxide. Our results suggest that the active electronic interatomic interaction (hopping) between Cu and oxygen atom is critical in determining OT. This also gives us an idea of what type of material factors is critical in forming a chiral orbital Rashba texture at the Cu/Oxide interface.

In this work, we characterized gadolinium oxide films deposited on silicon by high pressure sputtering with a two-step process: first, we sputtered metallic gadolinium in an argon atmosphere and then, we performed an in-situ plasma oxidation of the metallic layer previously deposited. By means of high resolution transmission electron microscopy, we can detect the oxidation degree of the metallic film. Under optimized deposition conditions, fully oxidized Gd2O3 films are obtained. In addition, the capacitance and conductance as a function of gate voltage of Pt gated metal-insulator-semiconductor capacitors confirm stable dielectric behavior of the fully oxidized films. The devices show low gate leakage currents (1e5 A/cm2 at 1 V for 2.2 nm of equivalent oxide thickness), low interface trap density and an almost negligible hysteresis and frequency dispersion.

Based on first principles density functional theory calculations we explore the energetics of the conversion of carbon mono and dioxide to methane over graphene oxide surfaces. Similar to the recently discovered hydration of various organic species over this catalyst, the transfer of hydrogen atoms from hydroxyl groups of graphene oxide provide a step by step transformation hydrogenation of carbon oxides. Estimated yields of modeled reactions at room temperature are about 0.01% for the carbon mono and dioxide. For the modeling of graphene oxide/metal oxide composites, calculations in the presence of MO_2 (where M = V, Cr, Mn, Fe) have been performed. Results of these calculations demonstrate significant decreases of the energy costs and increases of reaction yields to 0.07%, which is comparable to the efficiency of these reactions over platinum and ruthenium-based photocatalysts. Increasing the temperature to the value 100C should provide the total conversion of carbon mono and dioxides.

Density-functional theory calculations based on conventional as well as hybrid exchange-correlation functionals have been carried out to study the properties of helium in various oxides (Al2O3, TiO2, Y2O3, YAP, YAG, YAM, MgO, CaO, BaO, SrO) as well as at oxide-iron interfaces. Helium interstitials in bulk oxides are shown to be energetically more favorable than substitutional helium, yet helium binds to existing vacancies. The solubility of He in oxides is systematically higher than in iron and scales with the free volume at the interstitial site nearly independently of the chemical composition of the oxide. In most oxides He migration is significantly slower and He--He binding is much weaker than in iron. To quantify the solubility of helium at oxide-iron interfaces two prototypical systems are considered (Fe|MgO, Fe|FeO|MgO). In both cases the He solubility is markedly enhanced in the interface compared to either of the bulk phases. The results of the calculations allow to construct a schematic energy landscape for He interstitials in iron. The implications of these results are discussed in the context of helium sequestration in oxide dispersion strengthened steels, including the

Gate oxide degradation is more critical in Silicon-Carbide (SiC) MOSFETs than in Silicon (Si) MOSFETs. This is because of the smaller gate oxide thickness and the higher electric field that develops across the gate oxide in SiC MOSFETs. While multiple precursors have been identified for monitoring the gate oxide degradation in Si MOSFETs, very few precursors have been identified for SiC MOSFETs. The purpose of this paper is to demonstrate that gate oxide degradation precursors used in Si MOSFETs: a) threshold voltage, b) gate plateau voltage and c) gate plateau time, can also be used as precursors for SiC MOSFETS. Moreover, all three precursors are found to exhibit a simultaneous increasing trend (during the stress time) leading to an increase in on-state loss, switching loss and switching time of the SiC MOSFET. The existing studies of gate oxide degradation mechanisms in SiC MOSFETs, and their effects on threshold voltage and mobility were extended to correlate a variation of all three precursors using analytical expressions. The increasing trends of precursors were experimentally confirmed by inducing gate oxide degradation in commercial SiC MOSFET samples.

The oxidation and corrosion of metals are fundamental problems in materials science and technology that have been studied using a large variety of experimental and computational techniques. Here we review some of the recent studies that have led to significant advances in our atomic-level understanding of copper oxide, one of the most studied and best understood metal oxides. We show that a good atomistic understanding of the physical characteristics of cuprous (Cu$_2$O) and cupric (CuO) oxide and of some key processes of their formation has been obtained. Indeed, the growth of the oxide has been shown to be epitaxial with the surface and to proceed, in most cases, through the formation of oxide nano-islands which, with continuous oxygen exposure, grow and eventually coalesce. We also show how electronic structure calculations have become increasingly useful in helping to characterise the structures and energetics of various Cu oxide surfaces. However a number of challenges remain. For example, it is not clear under which conditions the oxidation of copper in air at room temperature (known as native oxidation) leads to the formation of a cuprous oxide film only, or also of a cupric

Phosphorene, the monolayer form of the (black) phosphorus, was recently exfoliated from its bulk counterpart. Phosphorene oxide, by analogy to graphene oxide, is expected to have novel chemical and electronic properties, and may provide an alternative route to synthesis of phosphorene. In this letter, we investigate physical and chemical properties of the phosphorene oxide including its formation by the oxygen adsorption on the bare phosphorene. Analysis of the phonon dispersion curves finds stoichiometric and non-stoichiometric oxide configurations to be stable at ambient conditions, thus suggesting that the oxygen absorption may not degrade the phosphorene. The nature of the band gap of the oxides depends on the degree of the functionalization of phosphorene; indirect gap is predicted for the non-stoichiometric configurations whereas a direct gap is predicted for the stoichiometric oxide. Application of the mechanical strain and external electric field leads to tunability of the band gap of the phosphorene oxide. In contrast to the case of the bare phosphorene, dependence of the diode-like asymmetric current-voltage response on the degree of stoichiometry is predicted for the pho

The dissociative adsorption of methane on variously oxidized Pd, Pt and Pd-Pt surfaces is investigated using density-functional theory, as a step towards understanding the combustion of methane on these materials. For Pd-Pt alloys, models of surface oxide structures are built on the basis of known oxides on Pd and Pt. The methane adsorption energy presents large variations depending on the oxide structure and composition. Adsorption is endothermic on the bare Pd(111) metal surface as well as on stable thin layer oxide structures such as the ($\sqrt{5}\times\sqrt{5}$) surface oxide on Pd(100) and the PtO$_2$-like oxide on Pt(111). Instead, large adsorption energies are obtained for the (100) surface of bulk PdO, for metastable mixed Pd$_{1-x}$Pt$_x$O$_{4/3}$ oxide layers on Pt(100), and for Pd-Pt(111) surfaces covered with one oxygen monolayer. In the latter case, we find a net thermodynamic preference for a direct conversion of methane to methanol, which remains adsorbed on the oxidized metal substrates via weak hydrogen-bond interactions.

Concomitant with the development of metal-based spintronics in the late 1980's and 1990's, important advances were made on the growth of high-quality oxide thin films and heterostructures. While this was at first motivated by the discovery of high-temperature superconductivity in perovskite Cu oxides, this technological breakthrough was soon applied to other transition metal oxides, and notably mixed-valence manganites. The discovery of colossal magnetoresistance in manganite films triggered an intense research activity on these materials, but the first notable impact of magnetic oxides in the field of spintronics was the use of such manganites as electrodes in magnetic tunnel junctions, yielding tunnel magnetoresistance ratios one order of magnitude larger than what had been obtained with transition metal electrodes. Since then, the research on oxide spintronics has been intense with the latest developments focused on diluted magnetic oxides and more recently on multiferroics. In this paper, we will review the most important results on oxide spintronics, emphasizing materials physics as well as spin-dependent transport phenomena, and finally give some perspectives on how the flurr

[Abridged] Ethylene oxide and its isomer acetaldehyde are important complex organic molecules because of their potential role in the formation of amino acids. Despite the fact that acetaldehyde is ubiquitous in the interstellar medium, ethylene oxide has not yet been detected in cold sources. We aim to understand the chemistry of the formation and loss of ethylene oxide in hot and cold interstellar objects (i) by including in a revised gas-grain network some recent experimental results on grain surfaces and (ii) by comparison with the chemical behaviour of its isomer, acetaldehyde. We test the code for the case of a hot core. The model allows us to predict the gaseous and solid ethylene oxide abundances during a cooling-down phase prior to star formation and during the subsequent warm-up phase. We can therefore predict at what temperatures ethylene oxide forms on grain surfaces and at what temperature it starts to desorb into the gas phase. The model reproduces the observed gaseous abundances of ethylene oxide and acetaldehyde towards high-mass star-forming regions. In addition, our results show that ethylene oxide may be present in outer and cooler regions of hot cores where its i

We present a comparative study of the growth of the technologically highly relevant gate dielectric and encapsulation material aluminum oxide in inorganic and also organic heterostructures. Atomic force microscopy studies indicate strong similarities in the surface morphology of aluminum oxide films grown on these chemically different substrates. In addition, from X-ray reflectivity measurements we extract the roughness exponent βof aluminum oxide growth on both substrates. By renormalising the aluminum oxide roughness by the roughness of the underlying organic film we find good agreement with βas obtained from the aluminum oxide on silicon oxide (β= 0.38 \pm 0.02), suggesting a remarkable similarity of the aluminum oxide growth on the two substrates under the conditions employed.

Complex oxides exhibit many intriguing phenomena, including metal-insulator transition, ferroelectricity/multiferroicity, colossal magnetoresistance and high transition temperature superconductivity. Advances in epitaxial thin film growth techniques enable us to combine different complex oxides with atomic precision and form an oxide heterostructure. Recent theoretical and experimental work has shown that charge transfer across oxide interfaces generally occurs and leads to a great diversity of emergent interfacial properties which are not exhibited by bulk constituents. In this report, we review mechanisms and physical consequence of charge transfer across interfaces in oxide heterostructures. Both theoretical proposals and experimental measurements of various oxide heterostructures are discussed and compared. We also review the theoretical methods that are used to calculate charge transfer across oxide interfaces and discuss the success and challenges in theory. Finally, we present a summary and perspectives for future research.

Two-dimensional charge carrier accumulation at oxide heterointerfaces presents a paradigm shift for oxide electronics. Like a capacitor, interfacial charge buildup couples to an electric field across the dielectric medium. To prevent the so-called polar catastrophe, several charge screening mechanisms emerge, including polar distortions and interfacial intermixing which reduce the sharpness of the interface. Here, we examine how atomic intermixing at oxide interfaces affect the balance between polar distortions and electric potential across the dielectric medium. We find that intermixing moves the peak charge distribution away from the oxide/oxide interface; thereby changing the direction of polar distortions away from this boundary with minimal effect on the electric field. This opposing electric field and polar distortions is equivalent to the transient phase transition tipping point observed in double well ferroelectrics; resulting in an anomalous dielectric response -- a possible signature of local negative differential capacitance, with implications for designing dissipationless oxide electronics.

Oxide materials exhibit several novel structural, magnetic, and electronic properties. Their stability under ambient conditions, easy synthesis, and high transition temperatures provide such systems with an ideal ground for realizing topological properties and real-life technological applications. However, experimental evidence of topological states in oxide materials is rare. In this study, we have synthesized single crystals of oxide double perovskite Sr2FeMoO6 and revealed its topological nature by investigating its structural, magnetic, and electronic properties. We observed that the system crystallized in the cubic space group Fm-3m, which is a half-metallic ferromagnet. Transport measurements show an anomalous Hall effect, and it is evident that the Hall contribution originates from the Berry curvature. Assuming a shift of the Fermi energy towards the conduction band, the contribution of the anomalous Hall effect is enhanced owing to the presence of a gaped nodal line. This study can be used to explore and realize the topological properties of bulk oxide systems.