To better distinguish the nature of $H_0$ and $S_8$ tensions, it is necessary to separate the effects of expansion and the growth of structure. The growth index $γ$ was identified as the most important parameter that characterizes the growth of density fluctuations independently of the effects of cosmic expansion. In the $Λ$CDM model, analyses performed with various cosmological datasets indicate that the growth index has to be larger than its theoretically predicted value. Cosmological models based on $f(R)$ gravity theories have scale-dependent growth indices, whose values are even more at odds with the growth rate data. In this work, we evaluate the growth index in the $γδ$CDM model both theoretically and numerically. Although based on $f(R)$ gravity theory, we show through several analyses with different combinations of datasets that the growth index in the $γδ$CDM model is very close in value to the $Λ$CDM and the $ω$CDM models. The growth of structure is suppressed in the $γδ$CDM model, which is formulated with the extended gravitational growth framework. Upon analyzing cosmological data, we ascertain that the $γδ$CDM model is equally competitive as the $Λ$CDM and the $ω$CDM
The development of uniform GaN micro-pyramids and platelets via selective area growth is a critical step toward advancing III-nitride device technologies, particularly for micro-light-emitting diode applications. This work investigates the origins of morphological non-uniformity in micro-pyramids and micro-platelets grown by metal-organic chemical vapor deposition (MOCVD). We observe that a direct one-step growth approach leads to significant growth rate inhomogeneity across arrays. To shed light on this issue, we examine the mechanisms driving non-uniformity and explore process modifications aimed at mitigating these effects. Building on these insights, we propose a controlled multi-step growth strategy that combines sequen-tial growth and thermal treatment phases. This approach is demonstrated to enhance surface morphology and structural regularity. The work contributes to the broader objective of enabling scalable, high-precision GaN microstructure fabrication for next-generation optoelectronic applications.
Sudden attention on social media, and how users navigate these contextual shifts, has been a focus of much recent work in social media research. Even when this attention is not harassing, some users experience this sudden growth as overwhelming. In this workshop paper, I outline how growth infuses the design of much of the modern social media platform landscape, and then explore why applying a post-growth lens to platform design could be productive.
Two-dimensional materials have attracted growing interest due to their unique electronic properties and potential applications in spintronics. Interfacing strongly spin-orbit-coupled chalcogenides with functional oxides such as perovskites has a particularly high potential. In this work, highly textured Bi2Te3 thin films were deposited on (111) oriented SrTiO3 by pulsed laser deposition. We show that, by careful selection of the temperature and pressure of growth, the film's stoichiometry can be manipulated between direct stoichiometry transfer from the target and tellurium-deficient phases. Optimized pulsed laser deposition enables the growth of films with coalesced, faceted grains with grain sizes reaching up to 430 nm, while preserving crystalline quality comparable to that of molecular-beam-epitaxy-grown films. We show striking differences arising from tuning the laser's pulsing frequency and fluence, which lead to changes in surface roughness, the film's porosity, and grain boundaries, as well as grain shape. Analysis of cross-sectional transmission electron microscopy images reveals a sharp substrate-film interface without atomic intermixing and without the formation of amorp
Similarity analysis of microalgae growth is crucial for understanding microalgae cultivation, such analysis has not been considered before in previous studies. This letter considers the natural features of the microalgae growth phenomenon that are different from the inanimate process. Accordingly, the similarity of light transfer within microalgae suspensions was comprehensively studied. The characteristic number of microalgae growth and the temporal scaling function were considered to represent the growth relate characteristics. Subsequently, a group of dimensionless numbers were derived to characterize the time-dependent similarity of light within microalgae suspensions. For growth similarity, the newly introduced characteristic number of microalgae growth and the temporal scaling function of extinction, absorption and scattering were considered identical. The similarity relations of the time-dependent optical constants of microalgae were also provided for similar growth. The similarity analysis of the microalgae growth will be useful in designing and guiding experiments on microalgae cultivation.
Image-based crop growth modeling can substantially contribute to precision agriculture by revealing spatial crop development over time, which allows an early and location-specific estimation of relevant future plant traits, such as leaf area or biomass. A prerequisite for realistic and sharp crop image generation is the integration of multiple growth-influencing conditions in a model, such as an image of an initial growth stage, the associated growth time, and further information about the field treatment. We present a two-stage framework consisting first of an image prediction model and second of a growth estimation model, which both are independently trained. The image prediction model is a conditional Wasserstein generative adversarial network (CWGAN). In the generator of this model, conditional batch normalization (CBN) is used to integrate different conditions along with the input image. This allows the model to generate time-varying artificial images dependent on multiple influencing factors of different kinds. These images are used by the second part of the framework for plant phenotyping by deriving plant-specific traits and comparing them with those of non-artificial (real
We report on growth-mode transitions in the growth of SrRuO3 thin films on atomically flat Ti4+ single-terminated SrTiO3 (111) substrates, investigated by reflection high-energy electron diffraction and atomic force microscopy. Over the first ~9 unit cells, the dominant growth mode changes from island to layer-by-layer for the growth rate of 0.074 unit cells/sec and the growth temperature of 700 C. Moreover, in the course of growing SrRuO3 films, the governing growth mode of interest can be manipulated by changing the growth temperature and the growth rate, which change allows for the selection of the desired layer-by-layer mode. The present study thus paves the way for integrations of SrRuO3 thin layers into (111)-orientated oxide heterostructures, and hence multi-functional devices, requiring control of the sharp atomic-level interfaces and the layer-by-layer growth mode.
Historical economic growth in Western and Eastern Europe is analysed. These regions should have produced the best and the most convincing confirmation of the Unified Growth Theory because they, and in particular Western Europe, were the centre of the Industrial Revolution, which according to Galor was the prime engine of economic growth. However, the data for Western and Eastern Europe show a remarkable disagreement with the Unified Growth Theory. There is no connection, whatever, between the data and the Unified Growth Theory. The data show that there was never a transition from stagnation to growth because there was no stagnation. Industrial Revolution, which should have the strongest influence in these regions, had absolutely no impact on changing the economic growth trajectories. The alleged remarkable or stunning escape from Malthusian trap did not happen because there was no trap. Unified Growth Theory does not explain the mechanism of the economic growth because its explanations are based on mythical features, which did not exist, the features contradicted by data. This theory needs to be either thoroughly revised or most likely replaced by a theory supported by a profession
In chemical vapor deposition (CVD) methods, the domain grows by attachment of diffusing surface bound species on the substrate to an island of solid domain. We formulate the process of single domain growth under two-dimensional diffusion by taking into account the movement of the domain boundary. We first discuss two types of definition of the domain area growth rate constant; the one defined through the domain size divided by the time duration of CVD growth and the other defined through the area divided by time. Then, we show that the domain size is proportional to time for the reaction limited growth and the domain area is proportional to time for the diffusion limited growth. We also show that the domain area growth rate changes from the reaction limited growth to the diffusion limited growth as the domain size increases beyond a characteristic size.
We report on a modified chemical vapor transport (CVT) methodology for the growth of pure and intercalated Zr, Ti, and Hf dichalcogenide single crystals, e.g. ZrTe2, Gd0.05ZrTe2, HfTe2, and Cu0.05TiTe2. While the most common method for CVT growth is carried out in quartz tubes subjected to a temperature gradient between the charge and the growth location, the growth using this isothermal-CVT (ICVT) method takes place isothermally in sealed quartz tubes placed horizontally in box furnaces, using iodine (I2) as the transport agent. The structure and composition of crystals were determined by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), and induced coupling plasma (ICP). The crystals grown with this method can be large, and show excellent crystallinity and homogeneity. Their morphology is plate-like, and the larger dimensions can be as long as 15 mm.
A description is given of the traveling solvent technique, which has been used for the crystal growth of both congruently and incongruently melting materials of many classes of intermetallic, chalcogenide, semiconductor and oxide materials. The use of a solvent, growth at lower temperatures and the zoning process, that are inherent ingredients of the method, can help to grow large, high structural quality, high purity crystals. In order to optimize this process, careful control of the various growth variables is imperative; however, this can be difficult to achieve due to the large number of independent experimental parameters that can be grouped under the broad headings growth conditions, characteristics of the material being grown, and experimental configuration, setup and design.This review attempts to describe the principles behind the traveling solvent technique and the various experimental variables. Guidelines are detailed to provide the information necessary to allow closer control of the crystal growth process through a systematic approach. Comparison is made between the traveling solvent technique and other crystal growth methods, in particular the more conventional stati
Large, high-purity single-crystals of hexagonal BN (h-BN) are essential for exploiting its many desirable and interesting properties. Here, we demonstrate via X-ray tomography, X-ray diffraction and scanning electron microscopy that h-BN crystals can be grown by traveling-solvent floating-zone (TSFZ). The diameters of grown boules range from 3 - 5 mm with lengths from 2 - 10 mm. Tomography indicates variable grain sizes within the boules, with the largest having areas of $\approx$ 1 mm $\times$ 2 mm and thickness $\approx$ 0.5 mm. Although the boules contain macroscale flux inclusions, the h-BN lattice itself is of high quality for samples grown under optimized conditions. The currently optimized growth procedure employs an Fe flux, moderate N$_2$ pressure ($P_{N2} \approx$ 6 bar), and a growth rate of 0.1 mm/h. Raman spectroscopy for an optimized sample gives an average linewidth of 7.7(2) cm$^{-1}$ for the E$_{\mathrm{2g}}$ intralayer mode at 1365.46(4) cm$^{-1}$ and 1.0(1) cm$^{-1}$ for the E$_{\mathrm{2g}}$ interlayer shear mode at 51.78(9) cm$^{-1}$. The corresponding photoluminescence spectrum shows sharp phonon-assisted free exciton peaks and minimal signal in the energy ran
Ce3+ doped oxide materials are promising for optical emission in the green spectral range. The growth of CaSc2O4:Ce3+ single crystals is reported here for the first time. Laser heated pedestal growth (LHPG) proved to be suitable for this refractive material, if performed in nitrogen of 99.999% purity. If the oxygen content of the growth atmosphere is substantially larger, Ce4+ is formed, which shows no useful optical emission. If the oxygen content is substantially lower, severe evaporation of calcium impedes stable crystal growth. Thermodynamic equilibrium calculations allowed to describe evaporation of species and cerium dopant charging under different growth conditions. The evaporation could be investigated by quadrupole mass spectrometry of emanating gases and by chemical analysis of fibers with ICP-OES. The congruent melting point was confirmed by DTA at 2110 degrees centigrade. Photoluminescence spectrometry of fibers revealed the dependence of optical emission in the green spectral range on growth conditions.
Single crystals of iridates are usually grown by a flux method well above the boiling point of the SrCl2 solvent. This leads to non-equilibrium growth conditions and dramatically shortens the lifetime of expensive Pt crucibles. Here, we report the growth of Sr2IrO4, Sr3Ir2O7 and SrIrO3 single crystals in a reproducible way by using anhydrous SrCl2 flux well below its boiling point. We show that the yield of the different phases strongly depends on the nutrient/solvent ratio for fixed soak temperature and cooling rate. Using this low-temperature growth approach generally leads to a lower temperature-independent contribution to the magnetic susceptibility than previously reported. Crystals of SrIrO3 exhibit a paramagnetic behavior that can be remarkably well fitted with a Curie-Weiss law yielding physically reasonable parameters, in contrast to previous reports. Hence, reducing the soak temperature below the solvent boiling point not only provides more stable and controllable growth conditions in contrast to previously reported growth protocols, but also extends considerably the lifetime of expensive platinum crucibles and reduces the corrosion of heating and thermoelements of standa
We introduce and validate an algorithm to compute transient amplication factors for the Orr-Sommerfeld-Squire linear theory for parallel two-phase flow. We further introduce direct numerical simulation as a way of comparing the linear theory with early-stage wave growth in simulations. The simulation results are drawn from a strongly supercritical parameter case wherein the modal growth rates are strong. In this case, the modal growth dominates the transient growth
New parametrisation for the electric and the magnetic form factors of proton and neutron are presented. The proton form factors describe well the recent measurements by BaBar collaboration and earlier ones of the ratio of the form factors in space-like region. The neutron form factors are consistent with earlier measurements of neutron pair production and ratio of the form factors in the space-like region. These form factors are implemented into the generator PHOKHARA, which simulates the reactions $e^+e^-\to \bar p p γ$ and $e^+e^-\to \bar n nγ$. The influence of final state radiation is investigated.
This investigation deals with the effect of growth temperature on the growth behavior of Fe filled multiwalled carbon nanotubes (MWCNTs). Carbon nanotube (CNT) synthesis was carried out in a thermal chemical vapor deposition (CVD) reactor in the temperature range 650 to 950 1C using propane as the carbon source, Fe as the catalyst material, and Si as the catalyst support. Atomic force microscopy (AFM) analysis of the catalyst exhibits that at elevated temperature clusters of catalyst coalesce and form macroscopic islands. Field emission scanning electron microscopy (FESEM) results show that with increased growth temperature the average diameter of the nanotubes increases but their density decreases. High-resolution transmission electron microscopy (HRTEM) studies suggest that the nanotubes have multi-walled structure with partial Fe filling for all growth temperatures. The X-ray diffraction (XRD) pattern of the grown materials indicates that they are graphitic in nature. The characterization of nanotubes by Raman spectroscopy reveals that the optimized growth temperature for Fe filled CNTs is 850 1C, in terms of quality. A simple model for the growth of Fe filled carbon nanotubes i
Dimension growth functions of groups have been introduced by Gromov in 1999. We prove that every solvable finitely generated subgroups of the R. Thompson group $F$ has polynomial dimension growth while the group $F$ itself, and some solvable groups of class 3 have exponential dimension growth with exponential control. We describe connections between dimension growth, expansion properties of finite graphs and the Ramsey theory.
In the crystal growth of transition metal dichalcogenides by the Chemical Vapor Transport method (CVT), the choice of the transport agent plays a key role. We have investigated the effect of various chemical elements and compounds on the growth of TiSe2, MoSe2, TaS2 and TaSe2 and found that pure I2 is the most suitable for growing TiSe2, whereas transition metal chlorides perform best with Mo- and Ta- chalcogenides. The use of TaCl5 as a transport agent in the CVT process allows to selectively growth either polymorph of TaS2 and TaSe2 and the optimum growth conditions are reported. Moreover, by using TaCl5 and tuning the temperature and the halogen starting ratio, it was possible to grow whiskers of the compounds TaS2, TaSe2, TaTe2, TaS3 and TaSe3.
The high-pressure optical floating-zone method enables single crystal growth of the Pmnb high-temperature phase of Li2FeSiO4. The influence of growth conditions on crystal quality, phase homogeneity, and impurity formation in Li2FeSiO4 is studied. The use of different starting materials, i.e., either the P121/n1 or the Pmn21 polymorph, as well as optimization of various growth conditions is investigated. Several mm3-sized high-quality single crystals are obtained by the choice of the Pmn21 polymorph as the starting material. A general challenge of Li2FeSiO4 crystal growth is polymorph control during crystallization. While the temperature gradient at the solid-liquid interface seems to have significant impact on stabilizing the Pmnb high-temperature phase, growth velocity has no evident effect.