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Background: Understanding electronic interactions in protein active sites is fundamental to drug discovery and enzyme engineering, but remains computationally challenging due to exponential scaling of quantum mechanical calculations. Results: We present a quantum-classical hybrid framework for simulating protein fragment electronic structure using variational quantum algorithms. We construct fermionic Hamiltonians from experimentally determined protein structures, map them to qubits via Jordan-Wigner transformation, and optimize ground state energies using the Variational Quantum Eigensolver implemented in pure Python. For a 4-orbital serine protease fragment, we achieve chemical accuracy (< 1.6 mHartree) with 95.3% correlation energy recovery. Systematic analysis reveals three-phase convergence behaviour with exponential decay (α = 0.95), power law optimization (γ = 1.21), and asymptotic approach. Application to SARS-CoV-2 protease inhibition demonstrates predictive accuracy (MAE=0.25 kcal/mol), while cytochrome P450 metabolism predictions achieve 85% site accuracy. Conclusions: This work establishes a pathway for quantum-enhanced biomolecular simulations on near-term quantum h

Modern power grids are transitioning towards power electronics-dominated grids (PEDG) due to the increasing integration of renewable energy sources and energy storage systems. This shift introduces complexities in grid operation and increases vulnerability to cyberattacks. This research explores the application of digital twin (DT) technology and machine learning (ML) techniques for anomaly detection in PEDGs. A DT can accurately track and simulate the behavior of the physical grid in real-time, providing a platform for monitoring and analyzing grid operations, with extended amount of data about dynamic power flow along the whole power system. By integrating ML algorithms, the DT can learn normal grid behavior and effectively identify anomalies that deviate from established patterns, enabling early detection of potential cyberattacks or system faults. This approach offers a comprehensive and proactive strategy for enhancing cybersecurity and ensuring the stability and reliability of PEDGs.

Efficient thermal management in high-power electronics cooling can be achieved using phase-change heat transfer devices, such as vapor chambers. Traditional vapor chambers use wicks to transport condensate for efficient thermal exchange and to prevent "dry-out" of the evaporator. However, wicks in vapor chambers present significant design challenges arising out of large pressure drops across the wicking material, which slows down condensate transport rates and increases the chances for dry-out. Thicker wicks add to overall thermal resistance, while deterring the development of thinner devices by limiting the total thickness of the vapor chamber. Wickless vapor chambers eliminate the use of metal wicks entirely, by incorporating complementary wettability-patterned flat plates on both the evaporator and the condenser side. Such surface modifications enhance fluid transport on the evaporator side, while allowing the chambers to be virtually as thin as imaginable, thereby permitting design of thermally efficient thin electronic cooling devices. While wick-free vapor chambers have been studied and efficient design strategies have been suggested, we delve into real-life applications of w

The effect of magnetic STM-tip on electronic, magnetic and electronic transport properties through the molecule junction STM-tip-Co/CoPc/Co(111), has been investigated by mean of ab initio electronic structure calculations. The spin transition has been studied by varying the distance (passing from the tunneling regime to the contact regime) between the tip and the CoPc molecule in both configurations, parallel and anti-parallel. Our calculation shows that the transition of spin of the Co atom of CoPc molecule has led to a change of the sign of the Magneto-Resistance (MR). It is also shown that the characteristic I-V has been influenced by this spin-transition of central atom of CoPc molecule.

Oxide-based two-dimensional electron gases (2DEGs) have generated significant interest due to their potential for discovering novel physical properties. Among these, 2DEGs formed in KTaO3 stand out due to the recently discovered crystal face-dependent superconductivity and large Rashba splitting, both of which hold potential for future oxide electronics devices. In this work, angle-resolved photoemission spectroscopy is used to study the electronic structure of the 2DEG formed at the (110) surface of KTaO3 after deposition of a thin Al layer. Our experiments revealed a remarkable anisotropy in the orbital character of the electron-like dispersive bands, which form a Fermi surface consisting of two elliptical contours with their major axes perpendicular to each other. The measured electronic structure is used to constrain the modeling parameters of self-consistent tight-binding slab calculations of the band structure. In these calculations, an anisotropic Rashba splitting is found with a value as large as 4 meV at the Fermi level along the [-110] crystallographic direction. This large unconventional and anisotropic Rashba splitting is rationalized based on the orbital angular moment

Vanadium dioxide (VO2) is a popular candidate for electronic and optical switching applications due to its well-known semiconductor-metal transition. Its study is notoriously challenging due to the interplay of long and short range elastic distortions, as well as the symmetry change, and the electronic structure changes. The inherent coupling of lattice and electronic degrees of freedom opens the avenue towards mechanical actuation of single domains. In this work, we show that we can manipulate and monitor the reversible semiconductor-to-metal transition of VO2 while applying a controlled amount of mechanical pressure by a nanosized metallic probe using an atomic force microscope. At a critical pressure, we can reversibly actuate the phase transition with a large modulation of the conductivity. Direct tunneling through the VO2-metal contact is observed as the main charge carrier injection mechanism before and after the phase transition of VO2. The tunneling barrier is formed by a very thin but persistently insulating surfacelayer of the VO2. The necessary pressure to induce the transition decreases with temperature. In addition, we measured the phase coexistence line in a hitherto

Disorder effects on the density of states and electronic conduction in metallic carbon nanotubes are analyzed by a tight binding model with Gaussian bond disorder. Metallic armchair and zigzag nanotubes are considered. We obtain a conductance which becomes smaller by the factor 1/2 ~ 1/3 from that of the clean nanotube. This decrease mainly comes from lattice fluctuations of the width which is comparable to thermal fluctuations. We also find that suppression of electronic conductance around the Fermi energy due to disorder is smaller than that of the inner valence (and conduction) band states. This is a consequence of the extended nature of electronic states around the Fermi energy between the valence and conduction bands, and is a property typical of the electronic structures of metallic carbon nanotubes.

We present a study of the electronic and optical bandgap in layered TiS3, an almost unexplored semiconductor that has attracted recent attention because of its large carrier mobility and inplane anisotropic properties, to determine its exciton binding energy. We combine scanning tunneling spectroscopy and photoelectrochemical measurements with random phase approximation and Bethe-Salpeter equation calculations to obtain the electronic and optical bandgaps and thus the exciton binding energy. We find experimental values for the electronic bandgap, optical bandgap and exciton binding energy of 1.2 eV, 1.07 eV and 130 meV, respectively, and 1.15 eV, 1.05 eV and 100 meV for the corresponding theoretical results. The exciton binding energy is orders of magnitude larger than that of common semiconductors and comparable to bulk transition metal dichalcogenides, making TiS3 ribbons a highly interesting material for optoelectronic applications and for studying excitonic phenomena even at room temperature.

First-principles electronic structure calculations are very widely used thanks to the many successful software packages available. Their traditional coding paradigm is monolithic, i.e., regardless of how modular its internal structure may be, the code is built independently from others, from the compiler up, with the exception of linear-algebra and message-passing libraries. This model has been quite successful for decades. The rapid progress in methodology, however, has resulted in an ever increasing complexity of those programs, which implies a growing amount of replication in coding and in the recurrent re-engineering needed to adapt to evolving hardware architecture. The Electronic Structure Library (\esl) was initiated by CECAM (European Centre for Atomic and Molecular Calculations) to catalyze a paradigm shift away from the monolithic model and promote modularization, with the ambition to extract common tasks from electronic structure programs and redesign them as free, open-source libraries. They include "heavy-duty" ones with a high degree of parallelisation, and potential for adaptation to novel hardware within them, thereby separating the sophisticated computer science as

The electronic structure of the $f$-based superconductor $\mathrm{CeIr_3}$ was studied by photoelectron spectroscopy. The energy distribution of the $\mathrm{Ce}~4f$ states were revealed by the $\mathrm{Ce}~3d-4f$ resonant photoelectron spectroscopy. The $\mathrm{Ce}~4f$ states were mostly distributed in the vicinity of the Fermi energy, suggesting the itinerant character of the $\mathrm{Ce}~4f$ states. The contribution of the $\mathrm{Ce}~4f$ states to the density of states (DOS) at the Fermi energy was estimated to be nearly half of that of the $\mathrm{Ir}~5d$ states, implying that the $\mathrm{Ce}~4f$ states have a considerable contribution to the DOS at the Fermi energy. The $\mathrm{Ce}~3d$ core-level and $\mathrm{Ce}~3d$ X-ray absorption spectra were analyzed based on a single-impurity Anderson model. The number of the $\mathrm{Ce}~4f$ states in the ground state was estimated to be $0.8-0.9$, which is much larger than the values obtained in the previous studies (i.e., $0-0.4$).

Using the polarisation labelling spectroscopy, we performed the detailed analysis of the level structure of excited electronic states of the $^{39}$KCs molecule in the excitation energy interval between 17500~cm$^{-1}$ and 18600~cm$^{-1}$ above the $v=0$ level of the $X^1Σ^+$ ground state. We prove that the observed states are strongly coupled by spin-orbit interaction above 18200~cm$^{-1}$, as manifested by numerous perturbations in the recorded spectra. The spectra are interpreted with the guidance of accurate electronic structure calculations on KCs, including potential energy curves, transition electric dipole moments, and representation of the spin-orbit interaction with a quasi-diabatic effective Hamiltonian approach. The agreement between theory and experiment is found remarkable, clearly discriminating among the available theoretical data. This study confirms the accuracy of the polarisation labelling spectroscopy to analyse highly-excited electronic molecular states which present a dense level structure.

We present results of it ab initio LDA calculations of electronic structure of "next generation" layered ironpnictide High-Tc superconductor LiFeAs (Tc=18K). Obtained electronic structure of LiFeAs is very similar to recently studied ReOFeAs (Re=La,Ce,Pr,Nd,Sm) and AFe2As2 (A=Ba,Sr) compounds. Namely close to the Fermi level its electronic properties are also determined ma inly by Fe 3d-orbitals of FeAs4 two-dimensional layers. Band dispersions of LiFeAs are very similar to the LaOFeAs and BaFe2As2 systems as well as the shape of the Fe-3d density o f states and Fermi surface.

Electronic tongues based on potentiometry offer the prospect of rapid and continuous chemical fingerprinting for portable and remote systems. The present contribution presents a technology platform including a miniaturized electronic tongue based on electropolymerized ion-sensitive films, microcontroller-based data acquisition, a smartphone interface and cloud computing back-end for data storage and deployment of machine learning models. The sensor array records a series of differential voltages without use of a true reference electrode and the resulting time-series potentiometry data is used to train supervised machine learning algorithms. For trained systems, inferencing tasks such as the classification of liquids are realized within less than 1 minute including data acquisition at the edge and inference using the cloud-deployed machine learning model. Preliminary demonstration of the complete electronic tongue technology stack is reported for the classification of beverages and mineral water.

Although the band topology of ZrGeSe has been studied via magnetic torque technique, the electronic transport behaviors related to the relativistic Fermions in ZrGeSe are still unknown. Here, we first report systematic electronic transport properties of high-quality ZrGeSe single crystals under magnetic fields up to 14 T. Resistivity plateaus of temperature dependent resistivity curves both in the presence and absence of magnetic fields as well as large, non-saturating magnetoresistance in low-temperature region were observed. By analyzing the temperature- and angular-dependent Shubnikov-de Haas oscillations and fitting it via the Lifshitz-Kosevich (LK) formula with the Berry phase being taken into account, we proved that Dirac fermions dominate the electronic transport behaviors of ZrGeSe and the presence of non-trivial Berry phase. First principles calculations demonstrate that ZrGeSe possesses Dirac bands and normal bands near Fermi surface, resulting in the observed magnetotransport phenomena. These results demonstrate that ZrGeSe is a topological nodal-line semimetal, which provides a fundamentally important platform to study the quantum physics of topological semimetals.

The ground-state 4f fine-structure levels in the intrinsic optical transition gaps between the 2p and 5d orbitals of lanthanide sesquioxides (Ln2O3, Ln=La...Lu) were calculated by a two-way crossover search for the U parameters for DFT+U calculations. The original 4f-shell potential perturbation in the linear response method were reformulated within the constraint volume of thegiven solids. The band structures were also calculated. This method yields nearly constant optical transition gaps between Ln-5d and O-2p orbitals, with magnitudes of 5.3~5.5 eV. This result verifies that the error in the band structure calculations for Ln2O3 is dominated by the inaccuracies in the predicted 4f levels in the 2p-5d transition gaps, which strongly and nonlinearly depend on the on-site Hubbard U. The relationship between the 4f occupancies and Hubbard U is non-monotonic and is entirely different from that for materials with 3d or 4d orbitals, such as transition metal oxides. This new linear response DFT+U method can provide a simpler understanding of the electronic structure of Ln2O3 and enables a quick examination of the electronic structures of lanthanide solids prior to hybrid functional or G

A characteristic feature of the state-of-the-art of real-space methods in electronic structure calculations is the diversity of the techniques used in the discretization of the relevant partial differential equations. In this context, the main approaches include finite-difference methods, various types of finite-elements and wavelets. This paper reports on the results of several code development projects that approach problems related to the electronic structure using these three different discretization methods. We review the ideas behind these methods, give examples of their applications, and discuss their similarities and differences.

The development of novel materials for vacuum electron sources in particle accelerators is an active field of research that can greatly benefit from the results of \textit{ab initio} calculations for the characterization of the electronic structure of target systems. As state-of-the-art many-body perturbation theory calculations are too expensive for large-scale material screening, density functional theory offers the best compromise between accuracy and computational feasibility. The quality of the obtained results, however, crucially depends on the choice of the exchange-correlation potential, $v_{xc}$. To address this essential point, we systematically analyze the performance of three popular approximations of $v_{xc}$ (PBE, SCAN, and HSE06) on the structural and electronic properties of bulk Cs$_3$Sb and Cs$_2$Te, two representative materials of Cs-based semiconductors employed in photocathode applications. Among the adopted approximations, PBE shows expectedly the largest discrepancies from the target: the unit cell volume is overestimated compared to the experimental value, while the band gap is severely underestimated. On the other hand, both SCAN and HSE06 perform remarkabl

This study deals with cubic crystals where the contents of the simple cubic unit cells are close to n$\times$n$\times$n-bcc sublattices ($n$ = 2: diamond- and zinc-blende type, $n$ = 3: $γ$-brasses). First-principle results on the electronic structure are obtained from augmented LMTO-ASA calculations and interpreted within a VEC-based Hume-Rothery concept which employs joined planar-radial interferences to treat interference and hybridization on the same footing. We show that the charge redistribution supports enhanced electronic interference which causes the band energy to decrease. Several topics are included such as stabilizing networks, hardness and $s$-to-$p$ transfer, co-operation of interferences, interplay between local radial order and global planar order, electron-per-atom ratio, and the comparison with recent FLAPW-based results.