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We explore the molecular beam epitaxy synthesis of superconducting aluminum thin films grown on c-plane sapphire substrates at cryogenic temperatures of 6 K and compare their behavior with films synthesized at room temperature. We demonstrate that cryogenic growth increases structural disorder, producing crystalline grains that modify the optical, electrical, and superconducting properties of aluminum. We observe that cryogenic deposition changes the color of aluminum from fully reflective to yellow and correlate the pseudo-dielectric function and reflectance with structural changes in the film. We find that smaller grain sizes enhance the superconductivity of aluminum, increasing its critical temperature and critical field. We then estimate the superconducting gap and coherence length of Cooper pairs in aluminum in the presence of disorder. Finally, we fabricate superconducting microwave resonators on these films and find that, independently of the growth temperature, the system is dominated by two-level system loss with similar quality factors in the high and low power regimes. We further measure a higher kinetic inductance in the cryogenically grown films.

The electronic and transport properties of aluminum-graphene composite materials were investigated using ab initio plane wave density functional theory. The interfacial structure is reported for several configurations. In some cases, the face-centered aluminum (111) surface relaxes in a nearly ideal registry with graphene, resulting in a remarkably continuous interface structure. The Kubo-Greenwood formula and space-projected conductivity were employed to study electronic conduction in aluminum single- and double-layer graphene-aluminum composite models. The electronic density of states at the Fermi level is enhanced by the graphene for certain aluminum-graphene interfaces, thus, improving electronic conductivity. In double-layer graphene composites, conductivity varies non-monotonically with temperature, showing an increase between 300-400 K at short aluminum-graphene distances, unlike the consistent decrease in single-layer composites.

This study investigates the influence of various growth parameters on normal-state resistivity and superconducting transition temperature Tc of granular aluminum films. Specifically, we focus on the effects of oxygen flow and aluminum evaporation rate during the growth process conducted at different substrate temperatures, from 300 K down to 25 K. We report systematic correlations between the growth conditions, the normal-state resistivity, and Tc. Furthermore our findings provide insights into optimizing the superconducting characteristics of granular aluminum.

Granular aluminum, which consists of nanometer-sized aluminum grains separated by aluminum oxide, is a peculiar superconductor. Its phase diagram as function of normal-state resistivity features a superconducting dome with a maximum critical temperature Tc well above the Tc = 1.2 K of pure aluminum. Here we show how the maximum Tc of this superconducting dome grows if the substrate temperature during deposition is lowered from 300 K to cooling with liquid nitrogen (150 K and 100 K) and liquid helium (25 K). The highest Tc we observe is 3.27 K. These results highlight that granular aluminum is a model system for complex phase diagrams of superconductors and demonstrate its potential in the context of high kinetic inductance applications. This is augmented by our observation of comparably sharp superconducting transitions of high-resistivity samples grown at cryogenic temperatures and by a thickness dependence even for films substantially thicker than the grain size.

We present a first principles investigation of strain-driven vacancy clustering in aluminum. Specifically, we perform Kohn-Sham density functional theory calculations to study the influence of hydrostatic strains on clustering in tri-, quad-, and heptavacancies. We find that compressive strains are a key driving force for vacancy aggregation, particularly for collapse of clusters on the (111) plane, consistent with prior experimental observations of vacancy clusters on this plane. Notably, we find that the heptavacancy on the (111) plane collapses to form a prismatic dislocation loop for hydrostatic compressive strains exceeding 5\%, highlighting the critical role of such strains in prismatic dislocation loop nucleation in aluminum.

Granular Aluminum is a superconductor known for more than eighty years, which recently found its application in qubits, microwave detectors and compact resonators, due to its high kinetic inductance, critical magnetic field and critical current. Here we report on the nonlinear dependence of granular Aluminum inductance on current, which hints towards parametric amplification of the microwave signal in granular Aluminum films. The phase shift of the microwave signal reached 4 radians at a frequency of 7 GHz, which makes it possible to estimate the nonlinearity of the system as 1.4 % and the potential gain of the order of 17 dB

Zinc Oxide is a thoroughly studied wide-bandgap semiconductor possessing excellent optical and electronic properties at room temperature. The renewed interest in this material has been generated by doping with various impurities in order to further enhance versatile optoelectronic responses for practical applications. Specifically, Aluminum-doped Zinc Oxide is an emerging transparent conducting oxide for photovoltaic applications. Here I propose to conduct a series of experimental studies on broadband optical nonlinearity as well as photoluminescence from Aluminum doped Zinc Oxide as a function of Aluminum doping. The results of this study include studies including 1) Bandgap measurements 2) wavelength-dependent third harmonic generation and 3) one-photon-induced Photoluminescence. The most notable result is a multifold enhanced third-order nonlinear optical response from weakly doped Aluminum doped Zinc Oxide (up to 4%) in comparison with the undoped counterpart. The observed nonlinear optical trend as a function of Aluminum doping is correlated to the modification of the corresponding band structure. The Aluminum doping effect is extensively investigated in the context of absorpt

The existing silicon-carbide-on-insulator photonic platform utilizes a thin layer of silicon dioxide under silicon carbide to provide optical confinement and mode isolation. Here, we replace the underneath silicon dioxide layer with a 1-$μ$m-thick aluminum nitride and demonstrate a 4H-silicon-carbide-on-aluminum-nitride integrated photonics platform for the first time. Efficient grating couplers, low-loss waveguides, and compact microring resonators with intrinsic quality factors up to 210,000 are fabricated. In addition, by undercutting the aluminum nitride layer, the intrinsic quality factor of the silicon carbide microring is improved by nearly one order of magnitude (1.8 million). Finally, an optical pump-probe method is developed to measure the thermal conductivity of the aluminum nitride layer, which is estimated to be over 30 times of that of silicon dioxide.

We report the direct observation of superconductivity in nitridized-aluminum thin films. The films are produced by sputtering deposition of aluminum in a controlled mixture of nitrogen diluted in argon. The concentration of applied nitrogen directly determines the properties of the superconducting thin films. We observe samples displaying critical temperatures up to 3.38$\pm$0.01K and resilience to in-plane magnetic fields well above 1T, with good reproducibility of the results. This work represents an unambiguous demonstration of tunable superconductivity in aluminum-based nitridized thin films. Our results put forward nitridized aluminum as a promising material to be employed in superconducting quantum circuits for quantum technology applications.

Recycled aluminum alloys are pivotal for sustainable manufacturing, offering strength, durability, and environmental advantages. However, the presence of iron (Fe) impurities poses a major challenge, undermining their properties and recyclability. Conventional manufacturing processes result in coarse Fe-rich intermetallic compounds that limit the tolerance of Fe content and negatively influence performance of advanced aluminum alloys. To address this, rapid solidification techniques like direct strip casting have been explored. In this work, a detailed study of the strip cast microstructure was conducted by scanning electron microscopy, electron backscattered diffraction and atom probe tomography. Our results reveal that alloys produced by DSC exhibit significantly refined microstructures and are free from coarse Fe-rich intermetallics, thereby retaining the majority of Fe in solid solution. These findings indicate that strip casting significantly enhances Fe-tolerance in aluminum alloys, making it an attractive process for future aluminum recycling, with implications for sustainable high-performance applications.

Manufacturing of aluminum alloy based casting composite materials via stir casting is one of the prominent and economical route for development and processing of metal matrix composites materials. Properties of these materials depend upon many processing parameters and selection of matrix and reinforcements. Literature reveals that most of the researchers are using 2, 6 and 7xxx aluminum matrix reinforced with SiC particles for high strength properties whereas, insufficient information is available on reinforcement of "Al2O3" particles in 7xxx aluminum matrix. The 7xxx series aluminum matrix usually contains Cu-Zn-Mg. Therefore, the present research was conducted to investigate the effect of elemental metal such as Cu-Zn-Mg in aluminum matrix on mechanical properties of stir casting of aluminum composite materials reinforced with alpha "Al2O3" particles using simple foundry melting alloying and casting route. The age hardening treatments were also applied to study the aging response of the aluminum matrix on strength, ductility and hardness. The experimental results indicate that aluminum matrix cast composite can be manufactured via conventional foundry method giving very good res

The BCS theory has achieved widespread success in describing conventional superconductivity. However, when the length scale reaches the atomic limit, the reduced dimensionality may lead to the quantum breakdown resulting in unpredictable superconducting behaviors. It has been exper imentally evidenced that the critical temperature is strongly enhanced in the monolayer films of FeSe/STO and epitaxial Aluminum. Here, we propose the exciton mechanism of superconductivity as a possible reason for the enhanced superconductivity in hybrid superconductor-semiconductor structures. The exciton-induced Cooper pairing may lead to the larger energy gaps and higher critical temperatures as compared to those caused by the phonon induced superconductivity. A detailed comparison of the theory and experimental results of Ref. 1 reveals the possibility of exciton-induced superconductivity in thin films of Aluminum near the monolayer limit.

We report on the cryogenic properties of a low-contraction silicon-aluminum composite, namely Japan Fine Ceramics SA001, to use as a packaging structure for cryogenic silicon devices. SA001 is a silicon--aluminum composite material (75% silicon by volume) and has a low thermal expansion coefficient ($\sim$1/3 that of aluminum). The superconducting transition temperature of SA001 is measured to be 1.18 K, which is in agreement with that of pure aluminum, and is thus available as a superconducting magnetic shield material. The residual resistivity of SA001 is 0.065 $\mathrm{μΩm}$, which is considerably lower than an equivalent silicon--aluminum composite material. The measured thermal contraction of SA001 immersed in liquid nitrogen is $\frac{L_{293\mathrm{K}}-L_{77\mathrm{K}}}{L_{293\mathrm{K}}}=0.12$%, which is consistent with the expected rate obtained from the volume-weighted mean of the contractions of silicon and aluminum. The machinability of SA001 is also confirmed with a demonstrated fabrication of a conical feedhorn array, with a wall thickness of 100 $\mathrm{μm}$. These properties are suitable for packaging applications for large-format superconducting detector devices.

Aluminum nitride is a technologically important wide bandgap semiconductor which has been shown to host bright quantum emitters. In this paper, we probe the photodynamics of quantum emitters in aluminum nitride using photon emission correlations and time-resolved spectroscopy. We identify that each emitter contains as many as 6 internal energy levels with distinct laser power-dependent behaviors. Power-dependent shelving and de-shelving processes, such as optically induced ionization and recombination are considered, indicating complex optical dynamics associated with the spontaneous and optically pumped transitions. State population dynamics simulations qualitatively explain the temporal behaviours of the quantum emitters, revealing that those with pump-dependent de-shelving processes can saturate at significantly higher intensities, resulting in bright room-temperature quantum light emission.

In polarimetry it is important to characterize the polarization properties of the instrument itself to disentangle real astrophysical signals from instrumental effects. This article deals with the accurate measurement and modeling of the polarization properties of real aluminum mirrors, as used in astronomical telescopes. Main goals are the characterization of the aluminum oxide layer thickness at different times after evaporation and its influence on the polarization properties of the mirror. The full polarization properties of an aluminum mirror are measured with Mueller matrix ellipsometry at different incidence angles and wavelengths. The best fit of theoretical Mueller matrices to all measurements simultaneously is obtained by taking into account a model of bulk aluminum with a thin aluminum oxide film on top of it. Full Mueller matrix measurements of a mirror are obtained with an absolute accuracy of ~1% after calibration. The determined layer thicknesses indicate logarithmic growth in the first few hours after evaporation, but it remains stable at a value of 4.12+/-0.08 nm on the long term. Although the aluminum oxide layer is established to be thin, it is necessary to consi

In recent years, tremendous progress has been made on complementary metal-oxide-semiconductor (CMOS) sensors for applications as X-ray detectors. To shield the visible light in X-ray detection, a blocking filter of aluminum is commonly employed. We designed three types of aluminum coating layers, which are deposited directly on the surface of back-illuminated sCMOS sensors during fabrication. A commercial 2k * 2k sCMOS sensor is used to realize these designs. In this work, we report their performance by comparison with that of an uncoated sCMOS sensor. The optical transmissions at 660 nm and 850 nm are measured, and the results show that the optical transmission reaches a level of about 10-9 for the 200 nm aluminum layer and about 10-4 for the 100 nm aluminum layer. Light leakage is found around the four sides of the sensor. The readout noise, fixed-pattern noise and energy resolution of these Al-coated sCMOS sensors do not show significant changes. The dark currents of these Al-coated sCMOS sensors show a noticeable increase compared with that of the uncoated sCMOS sensor at room temperatures, while no significant difference is found when the sCMOS sensors are cooled down to about

We present a study of the superconducting penetration depth $λ$ in aluminum thin films of varying thickness. The range of thicknesses chosen spans from the thin-film regime to the regime approaching bulk behavior. The penetration depths observed range from $λ= 163.3\pm0.4~\rm{nm}$ for the thinnest $20~\rm{nm}$ samples down to $λ= 53.6\pm0.4~\rm{nm}$ for the $200~\rm{nm}$-thick ones. In order to accurately determine $λ$, we performed complementary measurements using the frequency of superconducting $LC$ resonators as well as the resistance of normal-state meanders. Both methods yield comparable results, providing a well-characterized set of values of $λ$ in aluminum in the relevant range for applications in fields such as quantum computing and microwave radiation detector technologies.

We conisder the brittle versus ductile behavior of aluminum in the framework of the Peierls-model analysis of dislocation emission from a crack tip. To this end, we perform first-principles quantum mechanical calculations for the unstable stacking energy $γ_{us}$ of aluminum along the Shockley partial slip route. Our calculations are based on density functional theory and the local density approximation and include full atomic and volume relaxation. We find that in aluminum $γ_{us} = 0.224$ J/m$^2$. Within the Peierls-model analysis, this value would predict a brittle solid which poses an interesting problem since aluminum is typically considered ductile. The resolution may be given by one of three possibilites: (a) Aluminum is indeed brittle at zero temperature, and becomes ductile at a finite temperature due to motion of pre-existing dislocations which relax the stress concentration at the crack tip. (b) Dislocation emission at the crack tip is itself a thermally activated process. (c) Aluminum is actually ductile at all temperatures and the theoretical model employed needs to be significantly improved in order to resolve the apparent contradiction.

Aluminum, as a metallic material for plasmonics, is of great interest because it extends the applications of surface plasmon resonance into the ultraviolet (UV) region and excels noble metals in the natural abundance, cost and compatibility with modern semiconductor fabrication process. Here, we present UV to near-infrared (NIR) plasmonic resonance of single-crystalline aluminum nanoslits and nanoholes. The high-definition nanostructures are fabricated with focused ion-beam (FIB) milling into an ultrasmooth single-crystalline aluminum film grown on a semiconducting GaAs substrate with molecular beam epitaxy (MBE) method. The single-crystalline aluminum film shows improved reflectivity and reduced two-photon photoluminescence (TPPL) due to the ultrasmooth surface. Both linear scattering and non-linear TPPL are studied in detail. The nanoslit arrays show clear Fano-like resonance and the nanoholes are found to support both photonic modes and localized surface plasmonic resonance. We also found that TPPL generation is more efficient when the excitation polarization is parallel rather than perpendicular to the edge of the aluminum film. Such counter-intuitive phenomenon is attributed t