Unravelling metallic contaminants in complex polyimide heterostructures using deep ultraviolet spectroscopic ellipsometry

内容摘要

Metallic contaminants in complex heterostructures are important topics due to their significant roles in determining physical properties as well as device performance. Heterostructures of polyimide via on Al pad and Cu redistribution layer (RDL) on polyimide have shown exotic properties and are important for advanced semiconductor packaging systems. One main problem is significant leakage current variations, which affect the performance of the devices, yet the origin is far from understood. Furthermore, metal contaminations would occur at the buried interfaces and it is particularly challenging to probe them. Until now, the electronic and optical properties of complex polyimide heterostructures and the roles of metallic contaminants, especially in the deep ultraviolet (DUV) have not been studied extensively. Herewith, using spectroscopic ellipsometry (SE) in a broad DUV range supported with finite-difference time-domain (FDTD) calculations, we determine optical properties of contaminants with various concentrations and reveal their influence on device performance of under-bump vias and redistribution layer (RDL) architectures. The complex dielectric function shows varying contamina